Numerical simulation of non-toxic In2S3/SnS2 buffer layer to enhance CZTS solar cells efficiency by optimizing device parameters

Tripathi, Sonam; Kumar, Brijesh; Dwivedi, D. K.

doi:10.1016/j.ijleo.2020.166087

Cited by 39 publications

(10 citation statements)

References 40 publications

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“…(Zn 3 P 2 ) [41] (NiO) [42] (MoS 2 ) [43] (SrCu 2 O 2 ) [44] (CuAlO 2 ) [44] Thickness (SnS 2 ) [45] (STO) [46] (PCBM) [46] (SnO 2 ) [42] MZO [47] Thickness To measure the carrier current density at the same time, the equations are given below [31] J h ¼ qnμ h E À qD h ∂h ∂y (4)…”

Section: Glassmentioning

confidence: 99%

Performance Enhancement of Environmental Friendly Ge‐Based Perovskite Solar Cell with Zn₃P₂ and SnS₂ as Charge Transport Layer Materials

2021

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Today, the global world is concerned about the rapidly depleting fossil fuel reserves and the serious consequences of these fossil fuels on the environment have prompted an increase in interest in the development of clean and renewable energy sources. Currently, numerous inexhaustible power options, such as solar power, wind power, biomass, etc., are being implemented in the market. However, solar energy is abundant in our environment and is a safe and clean source of energy. As a result, considerable efforts were made in the development of advanced photovoltaic technology to achieve higher power conversion efficiency (PCE) and lower processing costs. In the last 10 years, technological advancements in organic-inorganic halide perovskite solar cells (PSCs) have demonstrated increased absorption coefficient, extended carrier-diffusion length, [1,2] improved carrier mobility, [3,4] ease of fabrication in a variety of areas, and the ability to meet photovoltaic application and space application requirements. [5][6][7] The Pbbased PSC device was initially developed by Kojima et al., who pioneered PSC research and reported a PCE of up to 3.8%. [8] Numerous studies conducted over the last decade have focused on Pb-based PSC devices as a light-absorbing material and have achieved an efficiency of approximately 25.2% in 2019. [9][10][11] The conventional formula of this device structure is ABX 3 which contains an organic methyl ammonium (CH 3 NH 3 þ ) [12] or formamidinium (NH ¼ CHNH 3 þ ) ion [13] and an inorganic element such as Pb, Ge, or Sn. [14,15] Despite its increased efficiency, the problem with this structure is its instability and toxicity, which prevents it from being used commercially. [16] To overcome these difficulties, germanium (Ge) can be used as a perovskite material to provide analogous optoelectronic properties to the PSC. Furthermore, Ge is a far superior contender in terms of stability and environmental friendliness. [17,18] Ge-based PSC devices are more thermally stable in the active layer than lead-based PSC devices, resulting in less material deterioration. [19,20] In the past, different researchers have synthesized Ge-based PSC devices. In 2013, Stoumpos et al., discovered unique nonlinear optical characteristics and a very unconventional structure in the Ge-based perovskite. [21] Following the synthesis of lead-free Ge perovskite materials in 2015, Krishnamoorthy et al. noticed that this class of photovoltaic materials showed a high potential for use in solar panels. [22] Recently, Kanoun et al. and Lakhdar et al. demonstrated computational analysis of the germanium structure of PSC devices, demonstrating an increase in the device's efficacy. [17,23] While researchers have demonstrated an increase in efficiency, the solar cell's current density ( J sc ) is extremely low, and a higher current density is required for the future of Ge-based perovskite solar cells (GBPSCs) with increased efficacy too.The GBPSC is constructed with an absorbance layer of germanium perovskite sandwiched between the ...

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Section: Glassmentioning

confidence: 99%

Performance Enhancement of Environmental Friendly Ge‐Based Perovskite Solar Cell with Zn₃P₂ and SnS₂ as Charge Transport Layer Materials

2021

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“…All key parameter values are taken from the literature. [ 28,43,48,52–54 ] The parameters of CdTe photovoltaic device are tabulated in Table 2 and 3 . The simulation is conducted under AM1.5G global solar irradiance with an operating temperature of 25 °C.…”

Section: Device Structure and Simulation Parametermentioning

confidence: 99%

Investigation of Electrical Parameters of CdTe Photovoltaic Devices by Computational Analysis

Singh

Agarwal

Kanumuri

2021

Physica Status Solidi (a)

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This article discusses the numerical analysis of heterojunction photovoltaic cells based on cadmium telluride (CdTe) using the SCAPS‐1D software. A novel glass/FTO/SnO2/CdS/interdiffusion/CdTe/SnS2/Se photovoltaic cell design is proposed for investigation. Additionally, the effect of thickness variation in the p‐type CdTe film, thickness variation in the interdiffusion layer, defect density in the CdTe film, defect density in the interdiffusion layer, and acceptor concentration in the CdTe layer is studied in order to improve the photovoltaic cell's efficiency. The study determines an optimal thickness of 1 and 0.6 μm for the CdTe and interdiffusion layers, respectively, a defect density of 1 × 1014 cm−3 for the CdTe film and interdiffusion region, an interface defect density of 1 × 1010 cm−3 between CdTe/interdiffusion, SnS2/CdTe, and CdS/interdiffusion, and an acceptor concentration value of 8.5 × 1015 cm−3. The optimized CdTe photovoltaic cell structure with current density (Jsc) = 30.003 mA cm−2, open‐circuit voltage (Voc) = 1.061 V, and fill factor (FF) = 88.10% achieves a 28.07% efficiency, compared to the baseline CdTe photovoltaic cell structure with a 23.01% efficiency.

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“…[3,4] However, the toxicity of Cd and scarcity of Te and In hinder their widespread commercialization. [5,6] Thus, to overcome the existing challenges in those mentioned thinfilm solar cells, Cu 2 ZnSn(S,Se) 4 (CZTSSe) has gained great research interest in the past decades as it contains nontoxic and Earth-abundant elements. [7] Nevertheless, detrimental defect formation and high open-circuit voltage (V OC ) deficit limit the performance of CZTSSe.…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, the presence of CdS limits commercialization as it contains the toxic element Cd, and its disposal in the environment causes severe problems for humanity and the ecosystem. [ 5 ] On the other hand, the highest PCEs of 6.73%, [ 18 ] 4.7%, [ 19 ] and 5.11% [ 20 ] are obtained for Cu 2 SnS 3, CuSb(S,Se) 2 , and Cu 2 BaSn(S,Se) 4 solar cells, respectively, in substrate configuration. These solar cells also suffer from large interfacial recombination and high V OC loss due to the unfavorable CBO at the absorber/CdS interface contributing to their low solar cell performance.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Insights of Degenerate ZrS₂ as a New Buffer for Highly Efficient Emerging Thin‐Film Solar Cells

Arockiya-Dass,

Sekar,

Marasamy

2023

Energy Tech

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SnS, Sb2Se3, Cu2SnS3, CuSb(S,Se)2, and Cu2BaSn(S,Se)4 are emerging as promising light absorbers for thin‐film photovoltaics due to their extraordinary optoelectronic properties. However, improper band alignment with the buffer and large open‐circuit voltage (VOC) deficit limits their power conversion efficiencies (PCE). Therefore, finding a suitable buffer that overcomes these obstacles is crucial. Herein, ZrS2 as an alternative buffer for the aforementioned emerging thin‐film solar cells using SCAPS‐1D is proposed. The important ZrS2 parameters are optimized, including bandgap, thickness, carrier concentration, and defect density. Interestingly, ZrS2 behaves as a degenerate semiconductor at carrier concentrations >1E17 cm−3, improving the conductivity of the solar cells; it also demonstrates a high defect tolerance nature when the defect density lies between 1E12 and 1E18 cm−3. After ZrS2 parameters optimization, the built‐in potential of SnS, Sb2Se3, Cu2SnS3, CuSb(S,Se)2, and Cu2BaSn(S,Se)4 solar cells is enhanced by 0.2, 0.58, 0.05, 0.42, and 0.3 V, respectively, reducing recombination rate. Upon optimizing absorbers parameters, a PCE > 35% for SnS, Sb2Se3, and CuSb(S,Se)2 while >32% for Cu2SnS3 and Cu2BaSn(S,Se)4 solar cells is accomplished with low VOC loss (≈0.1 V). The absorbers must have high carrier concentration (1E20 cm−3) and low defect density (1E14 cm−3) to achieve these PCEs.

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Numerical simulation of non-toxic In2S3/SnS2 buffer layer to enhance CZTS solar cells efficiency by optimizing device parameters

Cited by 39 publications

References 40 publications

Performance Enhancement of Environmental Friendly Ge‐Based Perovskite Solar Cell with Zn₃P₂ and SnS₂ as Charge Transport Layer Materials

Performance Enhancement of Environmental Friendly Ge‐Based Perovskite Solar Cell with Zn₃P₂ and SnS₂ as Charge Transport Layer Materials

Investigation of Electrical Parameters of CdTe Photovoltaic Devices by Computational Analysis

Theoretical Insights of Degenerate ZrS₂ as a New Buffer for Highly Efficient Emerging Thin‐Film Solar Cells

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Numerical simulation of non-toxic In2S3/SnS2 buffer layer to enhance CZTS solar cells efficiency by optimizing device parameters

Cited by 39 publications

References 40 publications

Performance Enhancement of Environmental Friendly Ge‐Based Perovskite Solar Cell with Zn3P2 and SnS2 as Charge Transport Layer Materials

Performance Enhancement of Environmental Friendly Ge‐Based Perovskite Solar Cell with Zn3P2 and SnS2 as Charge Transport Layer Materials

Investigation of Electrical Parameters of CdTe Photovoltaic Devices by Computational Analysis

Theoretical Insights of Degenerate ZrS2 as a New Buffer for Highly Efficient Emerging Thin‐Film Solar Cells

Contact Info

Product

Resources

About

Performance Enhancement of Environmental Friendly Ge‐Based Perovskite Solar Cell with Zn₃P₂ and SnS₂ as Charge Transport Layer Materials

Performance Enhancement of Environmental Friendly Ge‐Based Perovskite Solar Cell with Zn₃P₂ and SnS₂ as Charge Transport Layer Materials

Theoretical Insights of Degenerate ZrS₂ as a New Buffer for Highly Efficient Emerging Thin‐Film Solar Cells