NUMERICAL SIMULATION OF MID-INFRARED DOUBLE HETEROSTRUCTURES LASER BASED ON InAsSb/InAsSbP MATERIAL SYSTEM

Abstract

The numerical simulation of a double heterostructures (DH) laser diode based on n + -InAs0.61Sb0.13P0.26/ n + -InAs0.97Sb0.03/p + -InAs0.61Sb0.13P0.26 material system has been carried out in this paper. The proposed structure is suitable for use as a source for free space optical communication system at 3.7 μm at room temperature. The laser has been characterized in terms of several laser parameters like energy band diagram and doping profile. The current-voltage characteristics of structure have been estimated taking into account the degeneracy effect. The output power of the laser has been estimated by solving the applicable Helmholtz equation for the trial structure. The outcomes of the numerical simulation have been validated by the reported experimental results.