Numerical Simulation of Doping Process by BBr3 Tube Diffusion for Industrial n -Type Silicon Wafer Solar Cells

Development of Bifacial n‐Type Front‐and‐Back Contact Cells with Phosphorus Back Surface Field via Mask‐Free Approaches

“…During diffusion, wafers were back‐to‐back loaded to minimize the wrap‐around diffusion at the rear sides. The used preoptimized boron diffusion recipe produces a low saturation current density ( J 0, emitter ) of (35 ± 5) fA cm −2 with a sheet resistance ( R sheet, emitter ) of (94 ± 3) Ω sq −1 . Following boron diffusion, the wafers were single‐side etched on the rear side using an inline polishing tool.…”

A One Step Method to Produce Boron Emitters

“…Ryu et al described a mass production method to produce bifacial n‐type silicon solar cells using BBr 3 as a dopant source, such method includes a thermal diffusion at 850 °C followed by an in situ oxidation to remove the BRL and reduce surface recombination, a similar procedure is described by Rahman et al. Li et al performed a systematic analysis of the sensitivity of the BBr 3 based boron doping on the process parameters, using an industrial recipe that includes an oxidation‐step to drive the junction deeper, reduce surface concentration and reduce emitter saturation current ( J oe ) . A recent article from Ryu et al analyzed the impact of partial and complete removal of the BRL on cell performance …”

Effective passivation of p+ and n+ emitters using SiO2/Al2O3/SiNx stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells

“…Regarding boron junction formation, traditional B B r3 diffusion has shown excellent performance in the laboratory environment [3,4,[30][31][32] and has also demonstrated a promising potential for industry [33][34][35][36][37][38][39][40][41]. However, its low yield and throughput resulting from the so-called boron-rich layer combined with unavoidable two-sided doping hamper its application in mass production.…”

“…Boron tribromide (BBr3) liquid source diffusion was first successfully applied into lab research of c-Si solar cells by J. Zhao and A. Wang in 1990s [3,4,30] Based on their work, many research groups continued to study BBr3 diffusion both in lab and towards industry. In general, BBr3 diffusion has shown excellent performance in the lab environment [3,4,[30][31][32] and has also demonstrated a promising potential for PV industry [33][34][35][36][37][38][39][40][41]. However, two disadvantages hamper its application in mass production.…”