Numerical simulation of copper filling within mesoporous silicon by electrodeposition

Fukami, Kazuhiro; Chourou, Mohamed L.; Sakka, Tetsuo; Ogata, Yukio H.

doi:10.1002/pssa.201000087

Cited by 7 publications

(7 citation statements)

References 10 publications

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“…In the present paper, we studied platinum electrodeposition within mesoporous silicon formed in highly doped p-type silicon. The results of the fillings by electrodeposition and displacement deposition strongly support the effect of mass-transfer limitation reported in our previous papers (9,10). In addition, mesoporous silicon modified with an organic group was also used as a host matrix to understand the effect of nucleation by displacement deposition.…”

Section: Introductionsupporting

confidence: 83%

“…In almost all the previous papers, the effect of mass-transfer was out of focus. Recently, we studied the electrodeposition within porous silicon from the viewpoint of mass-transfer (8)(9)(10). We have studied copper electrodeposition within mesoporous silicon experimentally and theoretically (9,10).…”

Section: Introductionmentioning

confidence: 99%

“…Recently, we studied the electrodeposition within porous silicon from the viewpoint of mass-transfer (8)(9)(10). We have studied copper electrodeposition within mesoporous silicon experimentally and theoretically (9,10). In mesopores, mass-transfer limitation is inevitable due to the quite small pore size.…”

Section: Introductionmentioning

confidence: 99%

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Pt Filling within Mesoporous Silicon by Electrodeposition

et al. 2011

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The filling of platinum within mesoporous silicon prepared in highly doped p-type silicon was investigated. The deposition of platinum within the mesopores was achieved when using a solution with Pt (II), while the pores were kept empty in a solution with Pt (IV). The particles of platinum were obtained by displacement deposition. The particles were distributed uniformly within the mesopores. The electrodeposition under a weak cathodic polarization resulted in the formation of platinum rods due to the continuous filling from the bottom. The displacement deposition was successfully suppressed by modifying the pore wall by an organic group. The amount of platinum deposition obtained under the cathodic polarization was significantly decreased when using the wall-modified mesoporous silicon. These results suggest that the electrodeposition and displacement deposition occur simultaneously within as-prepared mesoporous silicon.

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Section: Introductionsupporting

confidence: 83%

Section: Introductionmentioning

confidence: 99%

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Pt Filling within Mesoporous Silicon by Electrodeposition

et al. 2011

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“…As a salient example, an electrochemical reaction within nanopores is remarkably decelerated once a a) Electric mail: fukami.kazuhiro.2u@kyoto-u.ac.jp b) Electric mail: kinoshit@iae.kyoto-u.ac.jp diffusion-limited condition is reached due to the difficulty in supply of reactants from the bulk. 8,9 Thus, it is often difficult in chemical or electrochemical reactions to elicit suitably high performance even when quite a large specific surface area is conferred to the porous structure. Design and control of injection into and ejection from nanopores is an important, challenging issue in modern nanotechnology.…”

Section: Introductionmentioning

confidence: 99%

Effect of cation species on surface-induced phase transition observed for platinum complex anions in platinum electrodeposition using nanoporous silicon

Koda

Koyama

Fukami

et al. 2014

The Journal of Chemical Physics

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In an earlier work [K. Fukami et al., J. Chem. Phys. 138, 094702 (2013)], we reported a transition phenomenon observed for platinum complex anions in our platinum electrodeposition experiment using nanoporous silicon. The pore wall surface of the silicon electrode was made hydrophobic by covering it with organic molecules. The anions are only weakly hydrated due to their large size and excluded from the bulk aqueous solution to the hydrophobic surface. When the anion concentration in the bulk was gradually increased, at a threshold the deposition behavior exhibited a sudden change, leading to drastic acceleration of the electrochemical deposition. It was shown that this change originates from a surface-induced phase transition: The space within a nanopore is abruptly filled with the second phase in which the anion concentration is orders of magnitude higher than that in the bulk. Here we examine how the platinum electrodeposition behavior is affected by the cation species coexisting with the anions. We compare the experimental results obtained using three different cation species: K(+), (CH3)4N(+), and (C2H5)4N(+). One of the cation species coexists with platinum complex anions [PtCl4](2-). It is shown that the threshold concentration, beyond which the electrochemical deposition within nanopores is drastically accelerated, is considerably dependent on the cation species. The threshold concentration becomes lower as the cation size increases. Our theoretical analysis suggests that not only the anions but also the cations are remarkably enriched in the second phase. The remarkable enrichment of the anions alone would give rise to the energetic instability due to electrostatic repulsive interactions among the anions. We argue that the result obtained cannot be elucidated by the prevailing view based on classical electrochemistry. It is necessitated to consult a statistical-mechanical theory of confined aqueous solutions using a molecular model for water.

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“…In addition, it is generally accepted that metal deposition on the metal is preferable compared to that on semiconductors. This is often reported in the field of electrodeposition on Si. , As a consequence, Pt deposition is qualitatively enhanced by MIR-FEL irradiation due to the enhancement of SiC oxidation, but the Pt distribution does not directly reflect the spatial distribution of oxidation-enhanced area of SiC. To quantify the relation among MIR-FEL irradiation, SFs, and SiC oxidation (Pt deposition), we need to evaluate the oxidation behavior microscopically using a sample irradiated to make a patterned array.…”

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confidence: 99%

Enhancement of Oxidation of Silicon Carbide Originating from Stacking Faults Formed by Mode-Selective Phonon Excitation Using a Mid-Infrared Free Electron Laser

Maeda

Zen

Kitada

et al. 2022

J. Phys. Chem. Lett.

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Silicon carbide (SiC) is a promising material for wide applications due to its excellent material properties including high physical and chemical stability as well as great electronic properties of a wide bandgap. The high stability, however, makes its surface processing difficult. Especially, electrochemical processing is not well-established because of low electrochemical reactivity. Here, we show that selective phonon excitation by a midinfrared free electron laser (MIR-FEL) enhances the anodic reactions. The selective excitation of two different vibration modes of the Si−C bond induces two different stacking faults, which act as a current path. As an application, we discovered that MIR-FEL irradiation enables Pt electroless deposition. This work reveals the interactions among phonons, lattice defects, and electrochemical reactions, encouraging further development of not only electrochemical surface processing but also a new application of MIR-FEL.

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Numerical simulation of copper filling within mesoporous silicon by electrodeposition

Cited by 7 publications

References 10 publications

Pt Filling within Mesoporous Silicon by Electrodeposition

Pt Filling within Mesoporous Silicon by Electrodeposition

Effect of cation species on surface-induced phase transition observed for platinum complex anions in platinum electrodeposition using nanoporous silicon

Enhancement of Oxidation of Silicon Carbide Originating from Stacking Faults Formed by Mode-Selective Phonon Excitation Using a Mid-Infrared Free Electron Laser

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