Numerical simulation of charge transport layer free perovskite solar cell using metal work function shifted contacts

Madan, Jaya; Garg, Sparsh; Gupta, Kartavya; Rana, Shivam; Manocha, Aanchal; Pandey, Rahul

doi:10.1016/j.ijleo.2019.163646

Cited by 36 publications

(11 citation statements)

References 19 publications

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“…The main reason for such superior results is the thicknesses of the ZnO layer (100 nm) and the silicon layer (100 μm) for which the structure is considered ideal. Rong [43] simulated n-CH 3 NH 3 PbI 3 /p-Silicon heterojunction solar cell in Silvaco TCAD for which an open circuit voltage of 0.41 V was obtained, which is similar to [44]. Fig.…”

Section: I-v Characteristicssupporting

confidence: 57%

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Analyzing the ZnO and CH3NH3PbI3 as Emitter Layer for Silicon Based Heterojunction Solar Cells

Gulomov¹,

Accouche²,

Алиев³

et al. 2023

Computers, Materials &Amp; Continua

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Today, it has become an important task to modify existing traditional silicon-based solar cell factory to produce high-efficiency silicon-based heterojunction solar cells, at a lower cost. Therefore, the aim of this paper is to analyze CH 3 NH 3 PbI 3 and ZnO materials as an emitter layer for p-type silicon wafer-based heterojunction solar cells. CH 3 NH 3 PbI 3 and ZnO can be synthesized using the cheap Sol-Gel method and can form n-type semiconductor. We propose to combine these two materials since CH 3 NH 3 PbI 3 is a great light absorber and ZnO has an optimal complex refractive index which can be used as antireflection material. The photoelectric parameters of n-CH 3 NH 3 PbI 3 /p-Si, n-ZnO/p-Si, and n-Si/p-Si solar cells have been studied in the range of 20-200 nm of emitter layer thickness. It has been found that the short circuit current for CH 3 NH 3 PbI 3 /p-Si and n-ZnO/p-Si solar cells is almost the same when the emitter layer thickness is in the range of 20-100 nm. Additionally, when the emitter layer thickness is greater than 100 nm, the short circuit current of CH 3 NH 3 PbI 3 /p-Si exceeds that of n-ZnO/p-Si. The optimal emitter layer thickness for n-CH 3 NH 3 PbI 3 /p-Si and n-ZnO/p-Si was found equal to 80 nm. Using this value, the short-circuit current and the fill factor were estimated around 18.27 mA/cm 2 and 0.77 for n-CH 3 NH 3 PbI 3 /p-Si and 18.06 mA/cm 2 and 0.73 for n-ZnO/p-Si. Results show that the efficiency of n-CH 3 NH 3 PbI 3 /p-Si and n-ZnO/p-Si solar cells with an emitter layer thickness of 80 nm are 1.314 and 1.298 times greater than efficiency of traditional n-Si/p-Si for the same sizes. These findings will help perovskites materials to be more appealing in the PV industry and accelerate their development to become a viable alternative in the renewable energy sector.

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Section: I-v Characteristicssupporting

confidence: 57%

“…[43], all of the open circuit voltages of our solar cells are smaller than 0.45 V, which is mainly due to metal's work-function of 4.3 eV, used as an ohmic contact in our simulations. In addition, it is proven that the open circuit voltage strongly depends on the metal work-function according to electric boundary conditions [44].…”

Section: I-v Characteristicsmentioning

confidence: 99%

Analyzing the ZnO and CH3NH3PbI3 as Emitter Layer for Silicon Based Heterojunction Solar Cells

Gulomov¹,

Accouche²,

Алиев³

et al. 2023

Computers, Materials &Amp; Continua

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“…Further increasing the defect density, the PCE reduces the minority charge carrier's diffusion length due to the equivalent recombination rate and generation rate. [ 61,62 ] Deep level defects act as Shockley Real‐Hall nonradiative recombination centers, which reduces the minority charge carriers. [ 54 ] To improve the defect diffusion length and the carrier lifetime of minority charge carriers, defect density should be low, which can be achieved by optimizing the materials processing conditions and thus improving the crystallinity.…”

Section: Resultsmentioning

confidence: 99%

Inorganic Lead‐Free Cs₂AuBiCl₆ Perovskite Absorber and Cu₂O Hole Transport Material Based Single‐Junction Solar Cells with 22.18% Power Conversion Efficiency

Kale

Chaurasiya

Dixit

2021

Advcd Theory and Sims

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Cs2AuBiCl6 is considered to be a potential lead‐free double perovskite alternative for perovskite solar cells. Its electronic and optical properties are investigated using density functional theory. The electronic properties of Cs2AuBiCl6 material ensure a bandgap of 1.40 eV (without considering SOC) and 1.12 eV (with SOC) using mBJ exchange‐correlation functional, close to the optimal bandgap for solar cell application as per the Shockley–Queisser limit. Optical properties suggest a high absorption coefficient ≈105 cm−1 with low reflectance, making it the optimal absorber material. Furthermore, the photovoltaic performance of Cs2AuBiCl6 based single‐junction transparent conducting oxide (TCO)/IDL1/Cs2AuBiCl6/IDL2/Cu2O solar cell is investigated using SCAPS‐1D device simulation program. The impact of electron affinity, thickness, carrier concentration, defect density, and interface defect density is examined using interface defect layer (IDL) on the photovoltaic performance. The maximum photoconversion efficiency (PCE) of ≈22.18% is noticed for optimized material's parameters. These studies on TCO/IDL1/Cs2AuBiCl6/IDL2/Cu2O solar cell will provide guidelines for designing and developing an efficient lead‐free perovskite‐based solar cell as an alternative to conventional halide perovskite materials based solar cell.

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“…N t significantly impacts the lifetime of minority charge carriers, which is also a result of intraband carrier recombination. With a further increase in N t , the diffusion length of the minority charge carriers reduces for the same recombination and generation rate, which lowers the PCE. , The negative impact beyond a significant defect density in the absorber layer is noticeable because of the enhanced scattering of photogenerated charge carriers at these defect sites. The minority charge carriers start reducing as a result of the Shockley–Read–Hall nonradiative recombination centers, which is typically the function at high defect levels .…”

Section: Resultsmentioning

confidence: 99%

Inorganic Cs₂TeX₆ (X = Cl, Br, I) Lead-Free Vacancy-Ordered Double-Perovskite Absorber-Based Single-Junction Solar Cells with a Higher Efficiency of ∼24%: Theoretical Insights

Pal,

Kale,

Sharma

et al. 2024

Energy Fuels

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We investigated the structural stability, density of states (DOS), optical and electronic properties of Cs2TeX6 (X = Cl, Br, I) vacancy-ordered double perovskites (VoDPs) using first-principles calculations. These VoDPs exhibit good structural stability based on tolerance factors, the Brown equation, and the formation energy. The calculated indirect bandgaps of Cs2TeX6 systems are also in agreement with the reported experimental values. We observed that the eigenband corresponding to the minima of the conduction band (CB) seems to be detached from the CB upon the consideration of spin–orbit coupling (SOC), and more band bending occurs at the “L” point. Overall, the high absorption coefficient (≈105 cm–1) of the Cs2TeI6 system, together with other optoelectronic properties in the visible spectrum range with moderate reflectance (∼33%), makes it a suitable photovoltaic (PV) absorber material. Furthermore, the PV performance of Cs2TeI6 material-based single-junction solar cell (SC) is investigated in the planar regular device configuration (n–i–p structure) for two different electron transport materials (ETMs: TiO2 and WS2). The optimum power conversion efficiency (PCE) of the FTO/n-WS2/Cs2TeI6/p-NiO SC configuration is found to be ∼23.74% together with open-circuit voltage (V oc), current density (J sc), and fill factor (FF) values of ∼1.094 V, 26.955 mA/cm2, and 80.53%, respectively. In addition, the photovoltaic response of the Cs2TeX6 absorber-based SC is also substantiated using the spectroscopic limited maximum efficiency (SLME) approach. Thus, the present work will play an important role in the realization of efficient lead-free VoDP-based single-junction SCs and other optoelectronic applications.

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Numerical simulation of charge transport layer free perovskite solar cell using metal work function shifted contacts

Cited by 36 publications

References 19 publications

Analyzing the ZnO and CH3NH3PbI3 as Emitter Layer for Silicon Based Heterojunction Solar Cells

Analyzing the ZnO and CH3NH3PbI3 as Emitter Layer for Silicon Based Heterojunction Solar Cells

Inorganic Lead‐Free Cs₂AuBiCl₆ Perovskite Absorber and Cu₂O Hole Transport Material Based Single‐Junction Solar Cells with 22.18% Power Conversion Efficiency

Inorganic Cs₂TeX₆ (X = Cl, Br, I) Lead-Free Vacancy-Ordered Double-Perovskite Absorber-Based Single-Junction Solar Cells with a Higher Efficiency of ∼24%: Theoretical Insights

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Numerical simulation of charge transport layer free perovskite solar cell using metal work function shifted contacts

Cited by 36 publications

References 19 publications

Analyzing the ZnO and CH3NH3PbI3 as Emitter Layer for Silicon Based Heterojunction Solar Cells

Analyzing the ZnO and CH3NH3PbI3 as Emitter Layer for Silicon Based Heterojunction Solar Cells

Inorganic Lead‐Free Cs2AuBiCl6 Perovskite Absorber and Cu2O Hole Transport Material Based Single‐Junction Solar Cells with 22.18% Power Conversion Efficiency

Inorganic Cs2TeX6 (X = Cl, Br, I) Lead-Free Vacancy-Ordered Double-Perovskite Absorber-Based Single-Junction Solar Cells with a Higher Efficiency of ∼24%: Theoretical Insights

Contact Info

Product

Resources

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Inorganic Lead‐Free Cs₂AuBiCl₆ Perovskite Absorber and Cu₂O Hole Transport Material Based Single‐Junction Solar Cells with 22.18% Power Conversion Efficiency

Inorganic Cs₂TeX₆ (X = Cl, Br, I) Lead-Free Vacancy-Ordered Double-Perovskite Absorber-Based Single-Junction Solar Cells with a Higher Efficiency of ∼24%: Theoretical Insights