Abstract:In this paper, a-Si:H/a-SiGe:H/μc-SiGe:H triple-junction solar cell structure is proposed. By the analyses of microelectronic and photonic structures (AMPS-1D) and our TRJ-F/TRJ-M/TRJ-B tunneling-recombination junction (TRJ) model, the most preferably combined bandgap for this structure is found to be 1.85 eV/1.50 eV/1.0 eV. Using more realistic material properties, optimized thickness combination is investigated. Along this direction, a-Si:H/a-SiGe:H/μc-SiGe:H triple cell with an initial efficiency of 12.09% … Show more
“…[9] The temperature coefficients of the bandgaps of a-Si, µc-Si, and β -FeSi 2 are 4.7×10 −4 eV/K, [24] 4.2×10 −4 eV/K, [25] and 3.1×10 −4 eV/K, [26] respectively. The Yunaz model [27,28] of the tunnel-recombination junction for simulating the triplejunction solar cell is employed. The simulated illumination is AM 1.5G, 100 mW/cm 2 .…”
Ji-Ren(袁吉仁) a)b)c) † , Shen Hong-Lie(沈鸿烈) b) , Zhou Lang(周 浪) a) , Huang Hai-Bin(黄海宾) a) , Zhou Nai-Gen(周耐根) a) , Deng Xin-Hua(邓新华) c) , and Yu Qi-Ming(余启名) c)
“…[9] The temperature coefficients of the bandgaps of a-Si, µc-Si, and β -FeSi 2 are 4.7×10 −4 eV/K, [24] 4.2×10 −4 eV/K, [25] and 3.1×10 −4 eV/K, [26] respectively. The Yunaz model [27,28] of the tunnel-recombination junction for simulating the triplejunction solar cell is employed. The simulated illumination is AM 1.5G, 100 mW/cm 2 .…”
Ji-Ren(袁吉仁) a)b)c) † , Shen Hong-Lie(沈鸿烈) b) , Zhou Lang(周 浪) a) , Huang Hai-Bin(黄海宾) a) , Zhou Nai-Gen(周耐根) a) , Deng Xin-Hua(邓新华) c) , and Yu Qi-Ming(余启名) c)
“…Nowadays, the triple junction silicon based thin film solar cell shows the state of art of conversion efficiency of 16.1% for p-i-n type [6] and 16.3% for n-i-p type [7]. The theoretical analysis of triple junction silicon thin film solar cell suggested that an optimum band gap of the bottom sub-cell absorber should be 0.9 [8] or 1.0 eV [9] depending on the type of the top and middle sub-cells. However, the band gap of the hydrogenated microcrystalline silicon (µc-Si:H) that generally has been used as the bottom sub-cell absorber was 1.1 eV which is not the optimal value.…”
“…[7] Many thin film Si solar cells have been demonstrated, including singlejunction hydrogenated amorphous silicon (a-Si), [4] tandemjunction amorphous/microcrystalline silicon, [8] and triplejunction amorphous silicon. [9,10] However, the thickness of the absorber layer for thin film silicon solar cells is only about hundreds or thousands of nanometers, which is not sufficient to absorb long wavelength light for solar spectrum. [11] Therefore, the power conversion efficiency (PCE) of thin film Si solar cells is relatively low compared with those of crystalline silicon and polycrystalline Si solar cells.…”
Light trapping characteristics of glass substrate with hemisphere pit arrays in thin film Si solar cells * Chen Le(陈 乐) a)b) , Wang Qing-Kang(王庆康) a) † , Wangyang Pei-Hua(王阳培华) a) , Huang Kun(黄 堃) a) , and Shen Xiang-Qian(沈向前) a) a) Key Laboratory for Thin Film and Micro-
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