Abstract:Self-heating (SHE) TCAD numerical simulations have been performed, for the first time, on 30nm FDSOI MOS transistors at extremely low temperatures. The self-heating temperature rise ππ πππ₯ and the thermal resistance π π‘ β are computed as functions of the ambient temperature π π and the dissipated electrical power (π π ), considering calibrated silicon and oxide thermal conductivities. The characteristics of the SHE temperature rise ππ πππ₯ (π π ) display sub-linear behavior at sufficiently hig… Show more
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