Numerical Optimization of a Tandem Solar Cell based on InxGa1-xN

Abstract

This article examines the best fraction of indium (x) and critical depth (H) of a single junction tandem photovoltaic (PV) cell (InxGa1-xN) in the vein to optimize its electrical efficiency. For better investigation, the optical and electronics parameters of a solar cell are determined as a function of the indium fraction and depth of the solar cell, leading to the resolution of the continuity equation and the establishment of the electrical characteristics (short circuit photocurrent, open-circuit photovoltage, maximum electric power). The outlet of our numerical investigations conducted under standard test conditions in the visible spectrum bandwidth of the irradiation, we found that the best indium fraction and the solar cell depth at the optimum electric power point are x=0.6 and H=1m (In0.6Ga0.4N) respectively. Furthermore under normalized irradiation condition (0.1 W/cm2, T=25oC), we found a maximum electric power and efficiency of about 28.53 mW/cm2 and 28.53% respectively.