Numerical Modelling on Industrial Scale Multi-Crystalline Silicon Growth Process at Critical Prandtl Number for PV Applications

Srinivasan, M.; Ramasamy, P.

doi:10.1007/s12633-016-9423-y

Cited by 2 publications

(2 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The market share of DS ingot production may once again be dominating if the price of silicon feedstock rises as it did in 2008. [29] The red zone of the CZ grown ingot may be used as a feedstock of DS grown ingot, which is of low quality [30][31][32] The schematic diagram of the DS furnace is shown in Figure 4.…”

Section: Ds Techniquementioning

confidence: 99%

See 1 more Smart Citation

A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications

Sekar,

Thamotharan,

Manickam

et al. 2023

Cryst. Res. Technol.

View full text Add to dashboard Cite

Crystalline silicon (c‐Si) solar cells have been accepted as the only environmentally and economically acceptable alternative source to fossil fuels. The majority of commercially available solar cells of all Photovoltaic (PV) cells produced worldwide, are made of crystalline silicon. Due to their excellent price/performance ratio and their demonstrated ecological durability, crystalline silicon wafers are by far the most common absorber material used in the production of solar cells and modules today. These wafers are primarily made using either a directional solidification that produces large‐grained multi‐crystalline (mc‐Si) wafers with a greater defect density or a solar‐optimized Czochralski (Cz) growing method that produces crystalline silicon with low defect density (c‐Si). The grown crystalline wafer contains foreign atoms that enhance the wire saw damage, reduce the minority carrier lifetime as a result get the minimum conversion efficiency of the solar cells. The current review illustrates how the elements of the furnace system affect impurity production and distribution of the developed silicon ingot and how the growth process affects the chemical reaction. Additionally, it covers the outcomes of simulations and experiments conducted on the growing process of c‐Si and mc‐Si ingots and recommends the most appropriate processing parameters, geometrical system, and argon gas flow rate.

show abstract

Section: Ds Techniquementioning

confidence: 99%

“…Bottom insulation wall opening. [31,33,38] The quasi-mono-crystalline silicon (Q-Si) ingot is grown in DS furnace by using c-Si as seeds. Figure 5 shows the schematic diagram of growth of Q-Si ingot.…”

Section: Ds Techniquementioning

confidence: 99%