Numerical modeling of thermal behavior and structural optimization of a-Si:H solar cells at high temperatures

Ganji, Jabbar; Kosarian, Abdolnabi; Kaabi, Hooman

doi:10.1007/s10825-016-0913-3

Cited by 10 publications

(3 citation statements)

References 31 publications

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“…The present study used the AFORS-HET instrument to perform the simulation, which is software to perform simulations for both homojunction and heterojunction structures that can solve 1D semiconductor equations (Poisson's and continuity equations) based on recombinant Shockley-Reed-Hall statistics (Ganji et al 2016;Froitzheim et al 2003;Dwivedi et al 2013). an optical model based on Lambert-Beer law-used to estimate the production of electron/hole pairs (Dwivedi et al 2013).…”

Section: Methodsmentioning

confidence: 99%

Simulation of a-SiGe/c-Si solar cell with silicene front contact

Madmeli,

Ganji

2024

Preprint

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The objective of the present study was to utilize the two-dimensional (2D) structures of silicone (known as silicene) in the structure of solar cells. Its spectacular optical and electronic properties justify its application in solar structures. For this purpose, silicene was involved in the solar cell structure in 3 manners: as silicene1, an n-type semiconductor layer doped with P impurity; silicene2, a p-type semiconductor layer doped with Al; and as the free-standing silicene for the front contact. The former two applications were conducted in the ITO/silicene (1, 2)/MoS2 (n)/a-SiGe: H (i)/c-Si (P)/Au structure, while the latter was in the Silicene/MoS2 (n)/a-SiGe: H (i)/c-Si (P)/Au structure. Using the AFORS-HET software, the solar cells were exposed to Am1.5 spectrum radiation at 300K temperature, and the impacts of 1 sun, 0.1 sun, and 10 sun of radiant intensity were evaluated to obtain a better insight into the function of this nanoribbon. The highest efficiencies in the mentioned radiant intensities were observed in the proposed cell with the silicene1 layer as the semiconductor, which were 18.96%, 17.96%, and 19.22%, respectively. Moreover, the efficiencies of the cell with free-standing silicene as the front contact were 27.13%, 25.95%, and 27.65%, respectively, in the mentioned radiant intensities.

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Section: Methodsmentioning

confidence: 99%

Simulation of a-SiGe/c-Si solar cell with silicene front contact

Madmeli,

Ganji

2024

Preprint

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“…The AFORS-HET software can simulate homojunction and heterojunction structures in which 1D semiconductor equations (Poisson's and continuity equations) are solved based on recombinant Shockley-Reed-Hall statistics [20][21][22]. Also, the optical model based on Lambert-Beer law can be employed to estimate the production of electron/ hole pairs [22].…”

Section: Simulation and Model Detailsmentioning

confidence: 99%

Investigating the potential of Germanene in solar cells: A simulation study on a-SiGe/c-Si structure

Madmeli,

Ganji

2024

Preprint

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Utilizing the two-dimensional (2D) nano-bands with graphene-like atom arrangement in the structure of the solar cells is of significant importance to present the next generation of solar cells. The present study used germanene (a 2D structure made of germanium atoms) as p-type and n-type semiconductor layers in structure ITO/germanene (1, 2, 3)/MoS2 (n)/a-SiGe: H (i)/c-Si (P)/Au of the heterojunction cell. In this structure, germanene (1, 2, 3) is the p-type germanene semiconductor layer doped with AL, the n-type germanene semiconductor layer doped with P, and the p-type germanene semiconductor layer doped with In, represented by germanene1, germanene2, and germanene3 respectively, and were used separately in the solar cell structure. Also, the free-standing germanene was used as front contact in structure germanene/MoS2 (n)/a-SiGe: H (i)/c-Si (P)/Au of the heterojunction cell. The impacts of different radiant intensities at 300 K temperature by the Am1.5 spectrum radiation were investigated using AFORS-HET simulation tool. According to the results, in 1 Sun radiant intensity, by employing germanene1, germanene2, and germanene3 layers separately in the cell structure, the highest efficiency was achieved in the presence of the germanene2, which was 18.64. The highest efficiency in 0.1 Sun and 100 Sun radiant intensities was 17.78 and 19.56, respectively, both obtained in the presence of the germanene2 layer. By applying the free-standing germanene in the structure of the proposed cell, the efficiency in radiant intensities of 1 Sun, 0.1 Sun, and 50 Sun were 26.98, 25.87, and 27.99, respectively. The positive effects of the germanene layer, both as semiconductor layers and free-standing germanene (front contact), were observable in all investigated radiant intensities.

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“…Table 1 contains the temperature-independent parameters of semiconductor layers in the simulation. The temperature-dependent parameters have been inferred from reference [20] and summarized in …”

Section: Introduction the Heterojunction With Intrinsicmentioning

confidence: 99%

NUMERICAL SIMULATION OF THERMAL BEHAVIOR AND OPTIMIZATION OF a-Si/a-Si/C-Si/a-Si/A-Si HIT SOLAR CELL AT HIGH TEMPERATURES

Ganji

2017

Elektroteh. elektromeh.

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Цель. Кремниевые гетероструктурные солнечные элементы, в частности гетеропереходы с ячейками внутреннего тонкого слоя (HIT), в последнее время рекомендуются для использования в качестве кремниевых элементов, поскольку они легко изготавливаются при низкой температуре обработки и имеют высокую оптическую и температурную стабильность, а также более высокий к.п.д., чем солнечные элементы на основе гомоперехода. В настоящей работе впервые предлагается относительно точная вычислительная модель для более точного расчета теплового поведения таких ячеек. В этой модели для всех слоев полупроводника рассматривается температурная зависимость многих параметров, таких как подвижность, тепловая скорость носителей, граница зоны, энергия Урбаха хвостов зоны, сродство электронов, относительная диэлектрическая проницаемость и эффективная плотность состояний в валентной зоне и в зоне проводимости. С использованием данной модели исследуется тепловое поведение HIT солнечных элементов в диапазоне 25-75 °C. В данном диапазоне температур исследовано влияние толщины различных слоев HIT ячейки на ее внешние параметры и в результате предложена оптимальная толщина слоев HIT солнечных элементов для использования в широком диапазоне температур. Библ. 20, табл. 4, рис. 5. Ключевые слова: гетеропереходы с ячейками внутреннего тонкого слоя, высокая температура, тепловое поведение.

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Numerical modeling of thermal behavior and structural optimization of a-Si:H solar cells at high temperatures

Cited by 10 publications

References 31 publications

Simulation of a-SiGe/c-Si solar cell with silicene front contact

Simulation of a-SiGe/c-Si solar cell with silicene front contact

Investigating the potential of Germanene in solar cells: A simulation study on a-SiGe/c-Si structure

NUMERICAL SIMULATION OF THERMAL BEHAVIOR AND OPTIMIZATION OF a-Si/a-Si/C-Si/a-Si/A-Si HIT SOLAR CELL AT HIGH TEMPERATURES

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