Numerical modeling of SiC by low-pressure chemical vapor deposition from methyltrichlorosilane

Numerical Simulation of Gas Phase Reaction for Epitaxial Chemical Vapor Deposition of Silicon Carbide by Methyltrichlorosilane in Horizontal Hot-Wall Reactor

“…However, the deposition quality of SiC is still limited via chemical vapor deposition (CVD) processes [3], which constitute an important technology for the semi-conductor industry [4,5]. Horizontal [5][6][7][8] and vertical [9][10][11][12] reactors were widely used for CVD processes. High temperature CVD process in the hot-wall CVD reactor can achieve relatively high growth rates of SiC [13][14][15].…”

“…However, extreme high temperature conditions contributed undesirable increase of defects in the grown SiC films [16]. In this work the gas phase species were reacted in the temperature range of 900-1500 • C. Similar temperature distributions were employed in comparable investigations [12,[16][17][18].…”

“…Methyltrichlorosilane (CH 3 SiCl 3 , MTS) is one of the chlorides contained species and can be used as the precursor gas for hot-wall chemical vapor deposition of SiC [17,18,23]. MTS becomes an affordable precursor for CVD processes of SiC since it has good performance in stoichiometric SiC deposition and can be facilitated at relatively lower temperature [12]. It decomposes in carrier gas to intermediate species, of which contribute greatly to deposition of the SiC film on the substrate surface [12,17].…”

“…MTS becomes an affordable precursor for CVD processes of SiC since it has good performance in stoichiometric SiC deposition and can be facilitated at relatively lower temperature [12]. It decomposes in carrier gas to intermediate species, of which contribute greatly to deposition of the SiC film on the substrate surface [12,17].…”

“…Since researchers are interested in understanding and predicting the overall growth phenomena in CVD processes, calculations [7,12,17,18,20,24] of chemical kinetics coupling with heat and mass transfer and fluid dynamics were commonly used to investigate SiC growth process. Simulation models [12,17,18,23,25] with gas phase reactions of MTS-H 2 gaseous system were proposed by different researchers. However, thorough investigations focus on the effect of reactor temperature, MTS/H 2 ratio and total gas flow rate are still lacked.…”