Abstract:Accurate numerical modeling for SOI devices of technical interest has always been challenging concerning the accuracy of the physical models as well as concerning the convergence properties of the numerical algorithms. For partially depleted devices the most important underlying reason is the necessity of a precise modeling of low impact ionization and diffusion currents in order to get reasonable results for the kink effect and noise. On the other hand in fully depleted devices the DIBL effect at smaller chan… Show more
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