Numerical modeling of highly sensitive resonant detection of THz radiation using a multichannel dispersive plasmonic HEMT

Daneshmandian, F.; Abdipour, Abdolali; Askarpour, Amir Nader

doi:10.1007/s10825-020-01651-x

Cited by 1 publication

(1 citation statement)

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“…We can also find that with higher electron gas concentrations, greater modulation depths are produced. The electron gas concentration can be modulated by the gate voltage, and the maximum modulation depth can be obtained by adjusting the gate voltage and duty cycle 31 . To further study the polarization properties at different temperatures, it is necessary to further investigate the spectral properties at different filling factors and gate lengths.…”

Section: Resultsmentioning

confidence: 99%

Investigation of temperature-dependent polarization properties in grating-gate AlGaN/GaN heterostructures by Drude conductivity at THz frequency

et al. 2023

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We describe the temperature-dependence polarization properties of grating-gated AlGaN/GaN heterostructures at terahertz frequencies. Using the finite-difference time-domain method, it was demonstrated that as the temperature increases, the resonant frequency of the incident light was red-shifted. Simultaneously, a shorter gate length leads to a higher resonant frequency. In addition, at a lower temperature, the coupling efficiency of terahertz radiation and plasmon is higher. In our simulation results, the maximum modulation depth is 88%; at a gate length of 800 nm and lattice temperature of 77 K. For the same gate length, with higher electron gas concentrations and filling factor, greater modulation depths were produced. Studies on these properties may help in the design and optimization of terahertz detectors and modulators.

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Section: Resultsmentioning

confidence: 99%