Numerical modeling of a microwave plasma CVD reactor

Горбачев, А. М.; Koldanov, V. A.; Vikharev, A. L.

doi:10.1016/s0925-9635(00)00503-3

Cited by 38 publications

(31 citation statements)

References 5 publications

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“…Figure 3 shows the electron density (n e ), power density (Q mw ), and the gas temperature (T) when the top diameters of substrate holder I are 60 and 30 mm, respectively. Figure 3 shows that the maximum electron density as well as the power density shift into the peripheral It is clear that the increase of the electron density and the power density increases the diamond deposition rate [26,27]. Figures 3(a3) and (b3) show that the plasma gas temperature increases when the substrate holder dimension in the radial direction decreases.…”

Section: The Effect Of Substrate Holder Dimension In the Radial Direcmentioning

confidence: 95%

The effect of substrate holder size on the electric field and discharge plasma on diamond-film formation at high deposition rates during MPCVD

An¹,

Chen²,

Liu³

et al. 2017

Plasma Sci. Technol.

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The effect of the substrate holder feature dimensions on plasma density (n e), power density (Q mw) and gas temperature (T) of a discharge marginal plasma (a plasma caused by marginal discharge) and homogeneous plasma were investigated for the microwave plasma chemical vapor deposition process. Our simulations show that decreasing the dimensions of the substrate holder in a radical direction and increasing its dimension in the direction of the axis helps to produce marginally inhomogeneous plasma. When the marginal discharge appears, the maximum plasma density and power density appear at the edge of the substrate. The gas temperature increases until a marginally inhomogeneous plasma develops. The marginally inhomogeneous plasma can be avoided using a movable substrate holder that can tune the plasma density, power density and gas temperature. It can also ensure that the power density and electron density are as high as possible with uniform distribution of plasma. Moreover, both inhomogeneous and homogeneous diamond films were prepared using a new substrate holder with a diameter of 30 mm. The observation of inhomogeneous diamond films indicates that the marginal discharge can limit the deposition rate in the central part of the diamond film. The successfully produced homogeneous diamond films show that by using a substrate holder it is possible to deposit diamond film at 7.2 μm h-1 at 2.5 kW microwave power.

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Section: The Effect Of Substrate Holder Dimension In the Radial Direcmentioning

confidence: 95%

The effect of substrate holder size on the electric field and discharge plasma on diamond-film formation at high deposition rates during MPCVD

An¹,

Chen²,

Liu³

et al. 2017

Plasma Sci. Technol.

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show abstract

“…Parameters included in the model are fixed throughout this paper as follows; neutral gas pressure p n = 160 Torr, neutral gas temperature T n = 10 3 K, field strength to maintain discharges E m = 8 Â 10 4 V/m, and minimum electron density n e min = 1 Â10 17 1/m 3 . Dependences on p n and imposed microwave powers are reported in other literatures [13,15]. To integrate governing equations, a customized version of JMAGStudio [16] is used.…”

Section: Simulation Proceduresmentioning

confidence: 99%

“…While there are many works of simulations [6][7][8][9][10][11][12][13][14][15], a diamond substrate with finite size has not been considered in their model reactor. Hence, to the best of the author's knowledge, local distributions around a thick substrate placed on substrate holders have never been reported.…”

Section: Introductionmentioning

confidence: 99%

Numerical analyses of a microwave plasma chemical vapor deposition reactor for thick diamond syntheses

Yamada

Chayahara

Mokuno

et al. 2006

Diamond and Related Materials

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“…Several fluid approaches have been proposed for hydrogen, [5][6][7][8][9] hydrogen-methane, 10,11 and argon 12 discharges for microwave plasmas, in which many conservation equations are coupled with Maxwell equations. A phenomenological model can reproduce qualitative characteristics consistent with experimental observations in some extent, in spite of its simplicity.…”

Section: Introductionmentioning

confidence: 99%

Simplified description of microwave plasma discharge for chemical vapor deposition of diamond

Yamada

Chayahara

Mokuno

2007

Journal of Applied Physics

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Control of plasma uniformity in a capacitive discharge using two very high frequency power sources A fluid model to prescribe microwave plasma is proposed. The conservation equations for electron are reduced to only one differential equation. Therefore, the computational cost is also reduced as small as possible. One may extend functions of existing program for vacuum field analysis to microwave plasma simulator by coupling this differential equation with Maxwell equations. While the model is quite simple, this model can prescribe distributions of electron temperature as well as the number density, whereas effects of inelastic collisions with ions and neutrals are taken into account. Test calculation is carried out in three dimensional system and well reproduces experimental observation and prediction obtained by other model.

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Numerical modeling of a microwave plasma CVD reactor

Cited by 38 publications

References 5 publications

The effect of substrate holder size on the electric field and discharge plasma on diamond-film formation at high deposition rates during MPCVD

The effect of substrate holder size on the electric field and discharge plasma on diamond-film formation at high deposition rates during MPCVD

Numerical analyses of a microwave plasma chemical vapor deposition reactor for thick diamond syntheses

Simplified description of microwave plasma discharge for chemical vapor deposition of diamond

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