Numerical large-signal simulation of the diffusion noise in GaAs Gunn devices

Wang, B.; Curow, M.

doi:10.1109/16.155890

Cited by 4 publications

(1 citation statement)

References 10 publications

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“…To date, this standard method and its further developments implemented by various research groups [2][3][4][5][6][7][8][9][10][11][12][13][14] represents the most powerful theoretical approach to investigate voltage fluctuations in devices which are described within a deterministic approach (the so called medium equations) such as drift-diffusion (DD), hydrodynamic (HD), Boltzmann transport equation (BTE), etc. When compared with more recent stochastic approaches, such as the Monte Carlo (MC) method [15], the IF method offers the significant advantage of analyzing separately both the noise sources, and the transfer field responsible of their spatio-temporal evolution.…”

Section: Introductionmentioning

confidence: 99%

Admittance Field Method for the Calculation of the Spectral Density of Current Fluctuations

et al. 2001

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In the framework of the Green-function formalism the admittance field method is proposed for the calculation of the spectral density of current fluctuations of two and more terminal devices. The usefulness of the theory is illustrated by hydrodynamic calculations performed for a submicron GaAs structure. The unifying property of the formalism evidences the same physical ground of both the admittance and impedance field methods when instantaneous fluctuations of carrier accelerations during scattering events are taken as noise sources.

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Section: Introductionmentioning

confidence: 99%

Admittance Field Method for the Calculation of the Spectral Density of Current Fluctuations

et al. 2001

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Transfer-field methods for electronic noise in submicron semiconductor structures

Shiktorov¹,

Starikov²,

Gruz̆inskis³

et al. 2001

Riv. Nuovo Cim.

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Hydrodynamic approach to noise spectra in unipolar semiconductor structures

Gruz̆inskis

Starikov

Shiktorov

et al. 1994

Applied Physics Letters

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By using a closed hydrodynamic approach coupled with the field-impedance method we evaluate the spectra of the small-signal impedance (admittance) and of the voltage (current) density of submillimeter n+nn+ diode generators. The calculations, which are performed for the case of InP with applied fields near the onset of self-oscillations, indicate the presence of a sharp peak of the current spectral density at the generation frequency.

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Numerical large-signal simulation of the diffusion noise in GaAs Gunn devices

Cited by 4 publications

References 10 publications

Admittance Field Method for the Calculation of the Spectral Density of Current Fluctuations

Admittance Field Method for the Calculation of the Spectral Density of Current Fluctuations

Transfer-field methods for electronic noise in submicron semiconductor structures

Hydrodynamic approach to noise spectra in unipolar semiconductor structures

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