Numerical investigation of thermal and residual stress of sapphire during c-axis vertical Bridgman growth process considering the solidification history effect

Hwang, Ji Hoon; Lee, Young Cheol; Lee, Wookjin

doi:10.1007/s12540-017-7157-z

Cited by 2 publications

(1 citation statement)

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“…It can be concluded that the solid-liquid interface in this experiment is convex from the segregation of In in section 3.1. A flat or slightly convex solid-liquid interface can effectively reduce the thermal stress generated by the temperature gradient [36]. Moreover, as described in section 3.1, the effective segregation coefficient k eff of the In component increases from 0.330 to 0.381 with Al doping content.…”

Section: Effect Of Al On the Dislocation Of Ga 086 In 014 Sb Crystalmentioning

confidence: 93%

Improving the quality and properties of GaInSb crystal with Al doping

Wang,

Liu,

Liu

et al. 2024

Phys. Scr.

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GaInSb crystal is a promising substrate material that can be used to prepare various high-performance devices. Ga0.86In0.14Sb and Al-doped Ga0.86In0.14Sb (Ga0.86In0.14Sb:Al) crystals were grown with the vertical Bridgman method (VB). The doping concentration of aluminum (Al) is 0.005 - 0.015 molar ratio. The effect of Al doping on the structure and properties of Ga0.86In0.14Sb crystal was studied. The results indicated that Al doping significantly reduced the segregation of indium (In) component in the crystal, with the radial segregation reaching a minimum of 0.051 mol%/mm and the axial segregation reaching a minimum of 0.067 mol%/mm. The doping of Al also improved the crystal quality (lattice structure integrity) of Ga0.86In0.14Sb. The passivation and compensation of Al on the intrinsic defects of Ga0.86In0.14 Sb crystal significantly inhibited the generation of dislocation, of which density decreased to 2.461 × 103 cm-2. The doping of Al as the equivalent electron element of gallium (Ga) and In not only made the carrier concentration increase to 1.848 × 1018 cm-3 but also made the carrier mobility increase to 1.982 × 103 cm2/(V·s), resulting in the resistivity decreasing to 1.261 × 10−3 Ω·cm.

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Section: Effect Of Al On the Dislocation Of Ga 086 In 014 Sb Crystalmentioning

confidence: 93%