Numerical investigation of resonances within the X-band waveguide type

Kancleris, Ž.; Tamošiūnas, V.; Dagys, M.; Simniškis, R.; Agee, F.J.

doi:10.1109/lmwc.2006.877135

Cited by 10 publications

(9 citation statements)

References 4 publications

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“…Therefore, even in a small dimension obstacles placed in the waveguide some resonances might occur. It was also confirmed by our earlier investigations of the semiconductor obstacles in the rectangular waveguide [10,11]. In the interim report [3], we have demonstrated that for H 01 mode the position of the resonance in the frequency scale and its type strongly depends on the configuration of the metal contacts.…”

Section: Resonancessupporting

confidence: 82%

“…The resonance in general is observed when either the length of the structure l or width corresponds to the integer number of λ d /2, where λ d is the wavelength of microwaves in the structure. Since the resonance might be used as a tool for the engineering of the output signal dependence on frequency [10,11] we considered in more detail the influence of electrophysical parameters of the SE (size and specific resistance) to the resonance phenomena in it.…”

Section: Resonancesmentioning

confidence: 99%

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Interaction of Semiconductor Obstacle with Electromagnetic Wave Propagating in Circular Waveguide

Kancleris¹

2008

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing the burden, to Department of Defense, Washington Headquarters Services, Directorate for Information PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES)Semiconductor Physics Institute Microwave Laboratory A. Gostauto 11 Vilnius LT-01108 Lithuania PERFORMING ORGANIZATION REPORT NUMBERN/A SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES)EOARD Unit 4515 BOX 14 APO AE 09421 SPONSOR/MONITOR'S ACRONYM(S) SPONSOR/MONITOR'S REPORT NUMBER(S)Grant 07-3028 DISTRIBUTION/AVAILABILITY STATEMENTApproved for public release; distribution is unlimited. SUPPLEMENTARY NOTES ABSTRACTThis report results from a contract tasking Semiconductor Physics Institute as follows: To achieve the proposed goals, the modeling of the circular waveguide section containing semiconductor obstacle will be performed. To calculate the average electric field in the semiconductor obstacle the finite difference time domain method will be used. Although, the lowest critical frequency in the circular waveguide is characteristic to H11 mode higher modes such as E01 and H01 are also sometimes used. Depending on mode some components of electromagnetic field are suppressed, nevertheless in the vicinity of the obstacle all six components of electromagnetic field might be excited and they should be taken into account when determining averaged electric field in the semiconductor obstacle. Since the resistive sensor actually feels the amplitude of electric field, the distribution of electric field component within the waveguide should have a crucial influence on the performance of the sensor and this fact should be taken into account in sensors design. Therefore it is also planning to investigate the behavior of the averaged electric field in the semiconductor obstacle when different modes are excited in the waveguide.To perform investigation it is planned to use internal programs for the modeling of electromagnetic wave propagating in the circular waveguide with the obstacle. Such modeling has already been done in rectangular waveguide with semiconductor obstacle placed on a wide wall of the waveguide and in the obstacle under the thin metal diaphragm. In both cases all six components of electromagnetic field in Cartesian coordinate system has been determined. It is planned to modify the program so that it should be able to calculate the electromagnetic field components in cylindrical coordinate system. SUBJECT TERMS

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Section: Resonancessupporting

confidence: 82%

Section: Resonancesmentioning

confidence: 99%

Interaction of Semiconductor Obstacle with Electromagnetic Wave Propagating in Circular Waveguide

Kancleris¹

2008

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“…Here the experimental investigations of the optimised RS with diaphragm are presented. Although the measured characteristics of the diaphragm type RS, in general, confirm the predicted one [3], it was found that its output characteristic is sufficiently nonlinear at HPM region. Therefore, we also investigated the alternative sensor with flat frequency response composed of two SE mounted on a wide wall of the waveguide.…”

Section: Introductionmentioning

confidence: 50%

“…Considering dependence of ζ on frequency it was established [3] that even for the same power level transmitted through the waveguide, electric field strength in it decreases with frequency because of waveguide dispersion. For X-band RS the waveguide dispersion is the only factor influencing the sensitivity of the RS and causing its decrease with frequency.…”

Section: Sensitivitymentioning

confidence: 99%

“…The main drawback of the diaphragm type RS up to now was a large variation of the sensitivity in a waveguide's frequency range. In our previous paper [3], the diaphragm type RS with flat frequency response was engineered using finite-difference time domain (FDTD) method. Here the experimental investigations of the optimised RS with diaphragm are presented.…”

Section: Introductionmentioning

confidence: 99%

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Experimental Investigation of High Pulse Power Microwave Resistive Sensor with Flat Frequency Response

Kancleris

Simniškis²,

Dagys³

et al. 2009

Acta Phys. Pol. A

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Two types of resistive sensors with flat frequency response for microwave pulse power measurements in X-band rectangular waveguide WR-90 up to 100 kW were developed and experimentally investigated. The first type of the sensors demonstrates higher sensitivity and larger output signal, while the second one exhibits better linearity of the output signal. The experimental investigations revealed the sensitivity variation within ±10% in 8.2-12.2 GHz frequency band.

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Resistive Sensor for High-Power Microwave Pulse Measurement in Double-Ridged Waveguide

Kancleris

Ragulis

Simniškis

et al. 2013

Ultra-Wideband, Short-Pulse Electromagnetics 10

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Numerical investigation of resonances within the X-band waveguide type

Cited by 10 publications

References 4 publications

Interaction of Semiconductor Obstacle with Electromagnetic Wave Propagating in Circular Waveguide

Interaction of Semiconductor Obstacle with Electromagnetic Wave Propagating in Circular Waveguide

Experimental Investigation of High Pulse Power Microwave Resistive Sensor with Flat Frequency Response

Resistive Sensor for High-Power Microwave Pulse Measurement in Double-Ridged Waveguide

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