Numerical investigation of quantum tunneling time and spin-current density in GaAs/GaMnAs/GaAs barriers: Role of an applied bias voltage

Al-Shameri, Najla S.; Dakhlaoui, Hassen

doi:10.1016/j.physb.2021.413555

Cited by 3 publications

(2 citation statements)

References 40 publications

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“…The spin-up transmission coefficient presents some oscillations with sharp amplitudes, however, the spin-down transmission coefficient grows linearly and tends to unity without oscillation. This behavior of the transmission coefficient was found by our theoretical model in our previous published work [29] which confirms the validity of our calculation.…”

Section: Electronic Transmission In An Asymmetric Structuresupporting

confidence: 92%

Spin-Current Oscillations in Diluted Magnetic Semiconductor Multibarrier GaMnAs/GaAs: Role of Temperature and Bias Voltage

Al-Shameri

Dakhlaoui

2022

Coatings

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This paper has studied the electronic properties of multi-diluted magnetic semiconductor (DMS) layers Ga(1-x)MnxAs interposed between nonmagnetic GaAs layers. The asymmetry of confining potential on the transmission coefficient by tuning the temperature and the size of the (DMS) layers was discussed. The diluted magnetic layers Ga(1-x)MnxAs behave as barriers for spin-up holes and quantum wells for spin-down holes. Furthermore, we have addressed the impact of an applied bias voltage and the temperature on the variation of the spin-polarization and spin current densities. Our findings reveal that the transmission coefficients present an oscillating behavior due to the resonant states and strongly depend on the temperature of the system and the number of magnetic layers. Furthermore, the obtained results demonstrated that the number of these states is multiplied by augmenting the magnetic layers. Moreover, we demonstrate that the asymmetric structure presents a completely different transmission of holes than the symmetric structure. Furthermore, the negative differential resistance (NDR) is demonstrated in the current density variations. Especially, this (NDR) was more intense for spin-up holes than spin-down holes. The findings in the present paper can be useful in manufacturing spin-filters by adjusting the values of the temperature and the external voltages.

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Section: Electronic Transmission In An Asymmetric Structuresupporting

confidence: 92%

Spin-Current Oscillations in Diluted Magnetic Semiconductor Multibarrier GaMnAs/GaAs: Role of Temperature and Bias Voltage

Al-Shameri

Dakhlaoui

2022

Coatings

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“…This expression is valid in systems with Hamiltonians containing up to second-order terms in the momentum operator [10] and is so far considered as the canonical definition for spin currents. Nevertheless, the study of the spin-current profile remains quite limited and is only performed in effective models where the wave functions are relatively simple [11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Spin-current in a Magnetic Semiconductor Tunnel Junction: Effect of External Bias Voltage

Nguyen¹,

Drouhin²,

Tho³

2022

Comm. in Phys.

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This paper investigates spin-current transport in a GaMnAs/GaAs/GaMnAs magnetic semiconductor tunnel junctions under applied bias voltages. The 30-band k.p approach is used to describe the materials within the heterostructure, incorporating both spin-orbit and exchange interactions. We use the transfer-matrix formalism to derive numerical solutions for the wave functions. At specific bias values, we calculate the polarization of the spin-current component along the z direction of the structure. We show oscillations of the two spin-current components perpendicular to the magnetization with equal polarization amplitude and characteristic period. The polarization amplitude varies around 10%, reflecting the typical polarization in such type of material. The oscillation period - which relates to the Larmor frequency for spin precession - increases with the bias voltage values.

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Determination of electronic band structure of quaternary ferromagnetic Ga0.97-Mn0.03CryAs epitaxial layers

Donmez

Güneş

Henini

et al. 2023

Physica B: Condensed Matter

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Numerical investigation of quantum tunneling time and spin-current density in GaAs/GaMnAs/GaAs barriers: Role of an applied bias voltage

Cited by 3 publications

References 40 publications

Spin-Current Oscillations in Diluted Magnetic Semiconductor Multibarrier GaMnAs/GaAs: Role of Temperature and Bias Voltage

Spin-Current Oscillations in Diluted Magnetic Semiconductor Multibarrier GaMnAs/GaAs: Role of Temperature and Bias Voltage

Spin-current in a Magnetic Semiconductor Tunnel Junction: Effect of External Bias Voltage

Determination of electronic band structure of quaternary ferromagnetic Ga0.97-Mn0.03CryAs epitaxial layers

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