Numerical Investigation of O2 Adsorption Effect in Si - CF4/O2 System

Grigoryev, Yu. N.; Gorobchuk, A. G.

doi:10.1109/icmel.2006.1651012

Cited by 2 publications

(9 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…5). In the previous calculations [4], [5] the dependence of hysteresis curve and the position of beginning of curling as functions of α s were obtained. The account of dependence ϑ e (x O2 ) does not lead to the qualitative differences in the earlier results obtained.…”

Section: Resultsmentioning

confidence: 99%

“…There are no qualitative differences in the average etching rate and fluorine concentration distributions as functions of O 2 addition with taking into account the dependence ϑ e (x O2 ). The location of the average etching rate maximum preserves and is defined only by the intensity of oxygen chemisorption on silicon α s [4], [5]. In calculations two values of this parameter are examined -0.3 and 1.…”

Section: Resultsmentioning

confidence: 99%

“…The parameter α s indicates the intensity of oxygen chemisorption on silicon and essentially influence on location and amplitude of maximum etching rate [4], [5]. The nonzero fraction ϑ O leads to hysteresis effect on the diagram of etching rate versus the fluorine concentration.…”

Section: Mathematical Model Formulationmentioning

confidence: 99%

“…The numerical modeling was carried out on the base of 2D-mathematical model of nonisothermal reactor [4], [5] with taking into account a peculiarities of plasma kinetics in a RF-discharge. As it was shown in [1]- [3] the influence of O 2 addition to CF 4 on the electron density is independent of the choice of constructive scheme and operating regimes of reactor.…”

Section: Mathematical Model Formulationmentioning

confidence: 99%

See 3 more Smart Citations

Effect of O<inf>2</inf> admixture: Competition of electron density and etching rate in CF<inf>4</inf>/O<inf>2</inf> plasma-etching process

Grigoryev¹,

Gorobchuk²

2008

2008 26th International Conference on Microelectronics

View full text Add to dashboard Cite

The effect of O 2 admixture concentration on silicon etching process in tetrafluoromethane − oxygen mixture is investigated on the base of numerical modeling. The calculations were carried out with using of the mathematical model of nonisothermal reactor that takes into account a peculiarities of plasma kinetics in RFdischarge. The gas flow mixture was described by the equations of multicomponent hydrodynamics including convective−diffusion transfer and production of all individual components of mixture. In the paper the numerical evaluations of electron density influence on the main characteristics of silicon etching are presented. It was shown that the fall of average density of energetic electrons in the reactor due to oxygen addition can decrease the etching rate in a range up to 30% but in any case the etching rate in mixture stays essentially more high that one in pure tetrafluoromethane.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Mathematical Model Formulationmentioning

confidence: 99%

Section: Mathematical Model Formulationmentioning

confidence: 99%

See 2 more Smart Citations

Effect of O<inf>2</inf> admixture: Competition of electron density and etching rate in CF<inf>4</inf>/O<inf>2</inf> plasma-etching process

Grigoryev¹,

Gorobchuk²

2008

2008 26th International Conference on Microelectronics

View full text Add to dashboard Cite

show abstract

“…The numerical modeling was carried out on the base of 2D-mathematical model of nonisothermal reactor [5], [6] with taking into account the peculiarities of plasma kinetics in a RF-discharge. As it was shown in [1]- [3] the influence of O 2 addition to CF 4 on the electron density is independent of the choice of constructive scheme of a reactor.…”

Section: Mathematical Model Formulationmentioning

confidence: 99%

Effect of electron density in RF-discharge on etching rate in plasma-chemical reactor

Grigoryev

Gorobchuk

2008

2008 IEEE Region 8 International Conference on Computational Technologies in Electrical and Electronics Engineering

View full text Add to dashboard Cite

The effect of O2 additive concentration on silicon etching process in tetrafluoromethane -oxygen mixture is investigated on the base of numerical modeling. The calculations were carried out with using an advanced mathematical model of plasma-chemical reactor. The model takes into account peculiarities of plasma kinetics in RF-discharge. The gas flow describes by the equations of multicomponent hydrodynamics including convective-diffusion transfer and production of all mixture components. In the paper an electron density influence the main characteristics of silicon etching are presented. It was shown that the fall of average density of energetic electrons in the reactor due to oxygen addition can decrease the etching rate in a range up to 30% but in any case the etching rate in mixture stays essentially more high that one in pure tetrafluoromethane.

show abstract

Numerical Investigation of O2 Adsorption Effect in Si - CF4/O2 System

Cited by 2 publications

References 7 publications

Effect of O<inf>2</inf> admixture: Competition of electron density and etching rate in CF<inf>4</inf>/O<inf>2</inf> plasma-etching process

Effect of O<inf>2</inf> admixture: Competition of electron density and etching rate in CF<inf>4</inf>/O<inf>2</inf> plasma-etching process

Effect of electron density in RF-discharge on etching rate in plasma-chemical reactor

Contact Info

Product

Resources

About