Numerical forecast of redzone extension in cast silicon ingots in dependence on the purity level of crucible, coating and feedstock

Schwanke, S.; Trempa, M.; Schuck, K.; Kranert, C.; Müller, M.; Reimann, C.; Kuczynski, M.; Schroll, Gustav; Sans, Jean-Louis; Stenzenberger, J.; Hesse, K.; Heitmann, Johannes; Friеdrich, J.

doi:10.1016/j.jcrysgro.2021.126304

Cited by 2 publications

(2 citation statements)

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“…This is mainly due to the presence of high concentrations of metal elements in crucibles, raw materials used, thermal fields, quartz crucibles, coating materials, furnace atmosphere, etc., among which crucibles are the main source of metal impurities. [5] These metal impurities will diffuse into the Si melt and then cast mono-Si ingot, resulting in the formation of red zone at the bottom and top of the cast mono-Si ingot. [3][4][5][6] The red zone has a significant impact on the performance of solar cells due to its severe leakage current and low photoelectric conversion efficiency.…”

Section: Introductionmentioning

confidence: 99%

“…[5] These metal impurities will diffuse into the Si melt and then cast mono-Si ingot, resulting in the formation of red zone at the bottom and top of the cast mono-Si ingot. [3][4][5][6] The red zone has a significant impact on the performance of solar cells due to its severe leakage current and low photoelectric conversion efficiency. [3] In actual production, the red zones need to be removed from the top and bottom of Si bricks before the remaining parts can be sliced into Si wafers.…”

Section: Introductionmentioning

confidence: 99%

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Effects of Impurity Barrier Layer on the Red Zone at the Bottom of Cast Monocrystalline Si Ingot for Solar Cells

Chen,

Hu,

Zhang

et al. 2023

Solar RRL

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A technique to prepare low‐cost high‐purity quartz sheets as impurity barrier layers between the crucible and the seed crystal is proposed herein to improve the casting process of monocrystalline Si (mono‐Si) ingots. The results show that the diffusion of metal impurities from the crucible toward a cast mono‐Si ingot can be hindered, increasing the minority carrier lifetime of Si crystals and reducing the height of the red zone at the bottom of the ingot. Solar cell devices assembled from cast mono‐Si ingots exhibit the enhancement in their overall photoelectric conversion efficiency (η) by 0.76% in comparison to those based on conventional mono‐Si ingots. Therefore, high‐purity quartz sheets as impurity barrier layers for the casting of mono‐Si ingots have great application potential in the photovoltaic industry.

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