Numerical and Experimental Investigations on the Growth of the Intermetallic Mg₂Si Phase in Mg Infiltrated Si‐Foams

Abstract

The present work explores the growing behavior of the intermetallic layer in the Mg-Si system. Following achievements have been obtained in our investigation: (i) A complete wetting concept is proposed for the lateral spreading of the intermetallic layer. (ii) In contrast to the stoichiometric property for the intermetallic phase in the phase diagram, the authors show that concentration gradients are able to be established in the kinetic process. (iii) Contrary to the reported growth behavior, d / t 0.25-0.5 in other intermetallics, the authors find a transition from d / ffiffi t p to d / t with an increase of the temperature, where d is the thickness of the intermetallic layer and t is the time.

Magnesium‐Related Donors in Silicon: State of the Art

“…One may propose that at a transient stage at the temperature increase-where the sandwich is heated from a low temperature-a film of silicide Mg 2 Si may form at the interface, see e.g. [37,38] It was shown [23] that the Mg 2 Si layer may serve as a source of magnesium diffusing into the silicon volume; see also ref. [37].…”

“…[37,38] It was shown [23] that the Mg 2 Si layer may serve as a source of magnesium diffusing into the silicon volume; see also ref. [37].…”

Phase-field modeling of reactive wetting and growth of the intermetallic Al2Au phase in the Al-Au system

“…∞ and E A in Eqs. (10) and (11) are determined by fitting the experimental data. The phase-field equations, Eqs.…”

Data workflow to incorporate thermodynamic energies from Calphad databases into grand-potential-based phase-field models

“…The advantages of the parabolically approximated functions are their lightweight computations and the proper representation of the thermodynamic information. In recent years, different binary [3,5,[14][15][16] and ternary [5,[17][18][19][20][21] alloys have therefore been modeled with parabolically approximated functions. A further advantage of this approach is that these functions are suitable for the application in free-energy-based [8,22] as well as in grand-potential-based phase-field models [23,24].…”