Numerical and experimental analysis of the static characteristics and noise in ungated recessed MESFET structures

Matéos, J.; González, T.; Pardo, D.; Tadyszak, Patrick; Danneville, F.; Cappy, A.

doi:10.1016/0038-1101(96)00083-4

Cited by 14 publications

(6 citation statements)

References 20 publications

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“…S I G exhibits an f 2 dependence, whereas the imaginary part of S I GI D increases proportionally to f (the real part of S I GI D is negligible at the frequencies shown). These dependencies obtained are in good agreement with those predicted by the theory for a MOSFET in general [20], and with the results given in the literature for other FET devices, like MESFETs [8] or HEMTs [24].…”

Section: Noisesupporting

confidence: 90%

“…Both parameters, together with the lateral position of the contacts, have been chosen in order to minimize the CPU time while ensuring carrier thermalization before reaching the drain contact. Even if these values may not correspond exactly to those employed in fabricated devices, their modification just leads to a change in the resistance of the ohmic regions next to the contacts; an effect that can be compensated for in a post-processing stage by means of considering a series resistance in the contacts [12]. Furthermore, since electron transport in a MOSFET depends basically on the inversion layer under the oxide, the relatively 'low' doping of the source and drain regions does not change the results significantly.…”

Section: Simulated Device and Monte Carlo Modelmentioning

confidence: 99%

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Monte Carlo analysis of dynamic and noise performance of submicron MOSFETs at RF and microwave frequencies

Rengel

Matéos

Pardo

et al. 2001

Semicond. Sci. Technol.

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In this paper, an ensemble 2D bipolar Monte Carlo simulator is employed for the study of static characteristics, high-frequency response and noise behaviour in a 0.3 µm gate-length n-MOSFET in common source configuration. Short-channel effects, such as velocity overshoot in the pinch-off region, together with the appearance of hot electrons at the drain end of the channel are observed in the static characteristics. Admittance parameters and the small-signal equivalent circuit have been calculated in order to characterize the dynamic response of the device. The use of a bipolar simulator allows one to study the dynamics of both types of carriers simultaneously. While the static results are dominated by the electron transport, the contribution of holes mainly affects the drain-substrate capacitive coupling. The noise behaviour of the simulated MOSFET is also studied (up to 40 GHz) by means of different parameters, such as the spectral densities of the current fluctuations at the drain and gate terminals (and their cross-correlation), normalized α, β and C parameters and NF min . In the saturation regime, due to the presence of hot carriers, an increase in drain and gate noise with respect to the long-channel prediction has been found. Moreover, a stronger correlation between drain and gate noise is observed, especially at low drain current. Induced gate noise is found to play a crucial role in the determination of NF min at high drain currents.

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Section: Noisesupporting

confidence: 90%

Section: Simulated Device and Monte Carlo Modelmentioning

confidence: 99%

Monte Carlo analysis of dynamic and noise performance of submicron MOSFETs at RF and microwave frequencies

Rengel

Matéos

Pardo

et al. 2001

Semicond. Sci. Technol.

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“…). Although C dependents strongly on the device geometry itself, the device B tends to show the somewhat smaller C than the others .…”

Section: Simulation Resultsmentioning

confidence: 91%

“…The power spectral densities of the auto‐correlation of noise sources at the gate and drain terminals S ig ( f ), S id ( f ), and the cross‐correlation between them S idig ( f ) are determined by the fast Fourier transform of the current fluctuations Δ I gs and Δ I ds at the gate and drain terminals in the steady state, respectively. The intrinsic dimensionless noise parameters P , R , and C , which represent the drain and the gate noise sources and their cross‐correlation, are also calculated by using the noise spectral densities and the Y parameters, as the following formulas :

P = \frac{S_{id}}{4 k_{normalB} T_{0} true| Y_{21} true|}, R = \frac{S_{ig} true| Y_{21} true|}{4 k_{normalB} T_{0} {| Y_{11} |}^{2}}, C = \frac{S_{idig}}{\sqrt{S_{id} S_{ig}}},

where k B is the Boltzmann constant and T 0 the reference temperature of 300 K. These would provide the information about the origin of the noise of the device.…”

Section: Simulation Methodsmentioning

confidence: 99%

Comparative study on noise characteristics of As and Sb‐based high electron mobility transistors

Takahashi

Hatsushiba

Fujikawa

et al. 2016

Physica Status Solidi (a)

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We study comparatively the RF and the noise characteristics for the In0.7Ga0.3As, InAs/AlSb and InSb high electron mobility transistors (HEMTs) by using the quantum corrected Monte Carlo (QC‐MC) simulation. The increase in the current fluctuation <ΔIds2> with Vds is caused by the increase in the electron velocity variance σnormalv2 (i.e., the electron heating); this indicates clearly that the low Vds operation is essential to lowering <ΔIds2>. The smaller electron effective m* results in the larger σnormalv2 and thus the larger <ΔIds2>, yet it allows the low Vds operation through the higher μ. The InSb HEMT with the channel of the smallest m* overcomes the inherent nature of the larger <ΔIds2> through the ability of the lower Vds operation along with the larger gm. Eventually, the InSb HEMT shows the smallest minimum noise figure NFmin of 0.31 dB with the associated gain Gass of 12.4 dB at 100 GHz and the highest cutoff frequency fT of 1.8 THz at Vds of 0.2 V. These results indicate the potential of the InSb HEMT for the ultra‐low power, ultra‐high frequency, and the ultra‐low noise transistor.

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“…The effect of the surface potential at the cap and recess surfaces of the device is modelled through a fixed negative surface charge (which is a good approximation at low biasing) that provokes carrier depletion in its surroundings [29][30][31]. The value of the surface charge is not the same in the whole device, since in the bottom of the recess the interface semiconductor is non-doped AlInAs (or AlSb in Sb-HEMTs), while in the rest it is the highly doped cap layer material.…”

Section: Monte Carlo Simulatormentioning

confidence: 99%

Monte Carlo modelling of noise in advanced III–V HEMTs

et al. 2014

Self Cite

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One of the main objectives of modern Microelectronics is the fabrication of devices with increased cutoff frequency and decreased level of noise. At this moment, the best devices for high-frequency, low-noise behavior are High electron mobility transistors (HEMTs) based on InGaAs and InAs channels. In this work, a complete analysis of ultrashort-gate HEMTs has been carried out by using a semiclassical Monte Carlo simulator, paying special attention to the noise performance. The validity of the model has been checked through the comparison of the simulated results with static, dynamic and noise measurements in real HEMTs. In order to reproduce the experimental results, we have included in the model some important real effects such as degeneracy, surface charges, presence of dielectrics and contact parasitics. The cryogenic performance of the HEMTs has also been analyzed. The influence of the parasitic resistances, width of the devices, value of the δ-doping and recess length has been analyzed when scaling down the gate length of the transistors to 50 nm aiming at achieving higher cutoff frequencies and better noise performance. The important effect of the impact ionization mechanisms and the consequent kink effect on the noise in both InGaAs and InAs based HEMTs have also been studied. Finally the advantages of the use of a double gate topology are quantified.

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Numerical and experimental analysis of the static characteristics and noise in ungated recessed MESFET structures

Cited by 14 publications

References 20 publications

Monte Carlo analysis of dynamic and noise performance of submicron MOSFETs at RF and microwave frequencies

Monte Carlo analysis of dynamic and noise performance of submicron MOSFETs at RF and microwave frequencies

Comparative study on noise characteristics of As and Sb‐based high electron mobility transistors

Monte Carlo modelling of noise in advanced III–V HEMTs

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