Numerical analysis of the pressure dependence of the etch rate in an Al etching reactor equipped with a helicon source

Ikeda, Kei

doi:10.1116/1.589772

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…The Cl 2 flow rate was 50 sccm, and the bias power was kept at 55 W. The TiN etch rate decreased as the pressure increased, except for the low pressure regime (pϽ4 mTorr͒. This result is similar to the aluminum etch behavior in a Cl 2 /BCl 3 helicon-wave plasma 11,12 and the TiN etch behavior in an SF 6 /Ar helicon plasma. 4 In contrast to the TiN etch response, the etch rate of SiO 2 increased monotonically as the pressure increased from 2.5 to 10 mTorr.…”

Section: Effect Of Bias Powersupporting

confidence: 55%

Characterization of titanium nitride etch rate and selectivity to silicon dioxide in a Cl2 helicon-wave plasma

Chiu

Lin

et al. 2001

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Influence on selective SiO 2 /Si etching of carbon atoms produced by CH 4 addition to a C 4 F 8 permanent magnet electron cyclotron resonance etching plasmaThe effects of Cl 2 and N 2 flow rate, substrate bias power, and reaction pressure on both the titanium nitride and SiO 2 etch rate plus the etch selectivity of TiN/SiO 2 in a high-density helicon-wave plasma were studied. It was found that the bias power has the greatest effect on etch rate and selectivity, followed by the reaction pressure. As the bias power increased, both the TiN and SiO 2 etch rate increased significantly. This result is consistent with the fact that the dominant etch mechanism for both SiO 2 and TiN is an ion-assisted energy driven etch mechanism rather than pure chemical etching. As the SiO 2 etch rate is drastically reduced from 403 Å/min to near zero when the bias power is decreased from 70 to 20 W, the etch selectivity of TiN to SiO 2 significantly rises from 55 to over 500. The effect of pressure was found to be more complex, having a different effect on the etch rate of TiN versus SiO 2 . By increasing the pressure from 2.5 to 4 mTorr, the TiN etching rate rose to a maximum at 4 mTorr and then monotonically decreased up to a pressure of 10 mTorr. This result is similar to aluminum etching in a Cl 2 /BCl 3 helicon-wave plasma. In contrast to the TiN etch behavior, the etch rate of SiO 2 increased monotonically over the full pressure range investigated. In addition to the effect on etch rate, the etch selectivity of TiN to SiO 2 noticeably increased with increasing pressure. Optical-emission spectroscopy was used to investigate the cause. It was determined that the effect of pressure on etch rate and selectivity could be explained by the change of atomic Cl radical density, ion flux, and ion energy. It was also observed that both the etch rate of TiN and SiO 2 slightly increased as Cl 2 flow rate increased from 10 to 90 sccm, reaching a maximum at about 70 sccm. The selectivity of TiN to SiO 2 remained around 8-11 in this Cl 2 flow rate range. The addition of N 2 seems to have only a small effect on etch rate.

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Section: Effect Of Bias Powersupporting

confidence: 55%

Characterization of titanium nitride etch rate and selectivity to silicon dioxide in a Cl2 helicon-wave plasma

Chiu

Lin

et al. 2001

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…This pressure effect is similar to other plasma etching processes, such as Cl 2 /BCl 3 etching of aluminum or SF 6 /Ar etching of TiN. 27,28 The pressure effect is due to the combination of the ion bombardment energy and the plasma phase chemistry. Figure 5b shows the changes of Cl and F radical concentrations as well as −V dc with the pressure.…”

Section: Resultsmentioning

confidence: 55%

Reactive Ion Etching of Titanium Tungsten Thin Films

Liu

Kuo

2007

J. Electrochem. Soc.

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Reactive ion etching processes on titanium tungsten thin films have been investigated with CF 4 /O 2 , CF 4 /Cl 2 , and CF 4 /HCl feed gases. Process parameters such as feed gas composition, radio-frequency power, and pressure showed tremendous effects on the etch rate and the etch selectivity. Both F and Cl are effective etchants for the titanium tungsten film. The etch rate is chemically controlled by the F concentration in the CF 4 /O 2 plasma, and by the sum of Cl and F concentrations in the CF 4 /Cl 2 and CF 4 /HCl plasmas. The etch rate is a function of both the plasma phase etchant concentration and the ion bombardment energy. The peak etch rate was obtained at the medium pressure range, e.g., 100 mTorr, due to the combination of the above two factors. The F residue was detected on the CF 4 plasma etched surface, while a trace amount of Cl was detected on the Cl 2 plasma etched surface. Although the plasma-enhanced chemical vapor deposition silicon nitride was etchable with the same type of plasma, an etch selectivity of greater than 2 was achieved under the low ion bombardment condition.

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Numerical analysis of the pressure dependence of the etch rate in an Al etching reactor equipped with a helicon source

Cited by 2 publications

References 6 publications

Characterization of titanium nitride etch rate and selectivity to silicon dioxide in a Cl2 helicon-wave plasma

Characterization of titanium nitride etch rate and selectivity to silicon dioxide in a Cl2 helicon-wave plasma

Reactive Ion Etching of Titanium Tungsten Thin Films

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