Numerical analysis of specific on-resistance for trench gate superjunction MOSFETs

Ōnishi, Yasuhiko; Hashimoto, Yuichi

doi:10.7567/jjap.54.024101

Cited by 7 publications

(7 citation statements)

References 31 publications

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“…Super-junction (SJ) structures have been developed to push power semiconductor devices beyond the operating limits of unipolar power devices. [1][2][3][4][5][6][7][8] Si-SJ devices are now widely used up to the 1 kV class, and similar impacts are also expected in the case of SiC SJ devices. Basically, the effect of the SJ structure becomes more prominent with increasing blocking voltage, and the structure will provide a distinct advantage when compared with recently developed Si insulated-gate bipolar transistors (IGBTs) 9,10) for highvoltage applications.…”

Section: Introductionmentioning

confidence: 99%

Strong impact of slight trench direction misalignment from $[11\bar{2}0]$ on deep trench filling epitaxy for SiC super-junction devices

Kosugi

Mochizuki

et al. 2017

Jpn. J. Appl. Phys.

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A trench filling epitaxial growth technique using hot-wall chemical vapor deposition with HCl gas has been developed for SiC super-junction (SJ) device fabrication. 2-6 kV class SJ devices require p/n column structures with depths of over 10 µm. However, rapid trench closure before the trench backfilling process is complete makes these structures difficult to realize. Stripe trenches that were intentionally inclined within +2°on a surface plane towards the ½11 20 direction were formed on an off-angled wafer, and the effects of trench direction misalignment from the offdirection were investigated. Slight trench direction misalignment was found to affect the tilt angle of the mesa top epi-layer strongly. Tilted growth on the mesa top reduced the filling rate at the trench bottom and caused void formation. When a wafer with high orientation-flat accuracy relative to the ½11 20 direction was used, 25-µm-deep trench backfilling was successfully demonstrated.

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Section: Introductionmentioning

confidence: 99%

Strong impact of slight trench direction misalignment from $[11\bar{2}0]$ on deep trench filling epitaxy for SiC super-junction devices

Kosugi

Mochizuki

et al. 2017

Jpn. J. Appl. Phys.

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“…2) In addition, superjunction (SJ) structures have been developed in power semiconductor devices in order to outperform the unipolar operating limits. 3,4) In SJ structures, p=n columns are used instead of a unipolar drift layer. It has recently been demonstrated that SJ structures with 25-µm-deep trenches can be fabricated even in wide-band-gap semiconductors such as silicon carbide (SiC).…”

mentioning

confidence: 99%

Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride

Horikiri

Ohta

Asai

et al. 2018

Appl. Phys. Express

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Photo-electrochemical (PEC) etching was used to fabricate deep trench structures in a GaN-on-GaN epilayer grown on n-GaN substrates. A 50-nm-thick layer of Ti used for an etching mask was not removed even after etching to a depth of >30 µm. The width of the side etching was less than 1 µm with high accuracy. The aspect ratio (depth/width) of a 3.3-µm-wide trench with a PEC etching depth of 24.3 µm was 7.3. These results demonstrate the excellent potential of PEC etching for fabricating deep trenches in vertical GaN devices.

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“…The fabrication of such devices requires the production of trenches and/or apertures. In particular, in the case of SJ structures that are used in Si power devices, to permit unipolar operating limits to be exceeded [8,9], it is necessary to fabricate deep trench structures in an n-type layer with a high depth-to-width aspect ratio that are subsequently backfilled with p-GaN. However, it is difficult to etch deep trenches in GaN.…”

Section: Introductionmentioning

confidence: 99%

Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices

Horikiri

Sato

Fukuhara

et al. 2019

IEEE Trans. Semicond. Manufact.

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Photoelectrochemical (PEC) etching was used to fabricate deep trench structures in GaN-on-GaN epilayers grown on n-GaN substrates. The width of the side etching was less than 1 µm, with high accuracy. The aspect ratio (depth/width) of a 3.3-µm-wide trench with a PEC etching depth of 24.3 µm was 7.3. These results demonstrate the excellent potential of PEC etching for fabricating deep trenches in vertical GaN devices. Furthermore, we simplified the PEC etching technology to permit its use in a wafer-scale process. We also demonstrated simple contactless PEC etching technologies for the manufacture of power and RF devices. A trench structure was fabricated in a GaN-on-GaN epilayer by simple contactless PEC etching. The role of the cathodic reaction in contactless PEC etching is discussed in relation to the application of a GaN HEMT epilayer on a semi-insulating substrate. Fortunately, the GaN HEMT structure contains an ohmic electrode that can act as a cathode in contactless PEC etching, thereby permitting the recess etching of a GaN HEMT epilayer grown on a semi-insulating SiC substrate. These results indicate that PEC etching technologies are becoming suitable for use in the fabrication of practical GaN power and RF devices.

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Numerical analysis of specific on-resistance for trench gate superjunction MOSFETs

Cited by 7 publications

References 31 publications

Strong impact of slight trench direction misalignment from $[11\bar{2}0]$ on deep trench filling epitaxy for SiC super-junction devices

Strong impact of slight trench direction misalignment from $[11\bar{2}0]$ on deep trench filling epitaxy for SiC super-junction devices

Excellent potential of photo-electrochemical etching for fabricating high-aspect-ratio deep trenches in gallium nitride

Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices

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