Numerical analysis of quantum dots on off-normal incidence ion sputtered surfaces

Yewande, Emmanuel O.; Kree, Reiner; Hartmann, Alexander K.

doi:10.1103/physrevb.75.155325

Cited by 33 publications

(22 citation statements)

References 28 publications

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“…They found that without rotation, the average number of dots decreases with increasing fluence, while it remains nearly constant for a rotating sample. In addition, the uniformity of dots enhances by sample rotation [26]. Similar is the case for us in InP where we observe the reduced number of dots for increasing ion fluence.…”

Section: Resultssupporting

confidence: 71%

“…Indeed, this is the case for the present study where the Ar-ion penetration depth varies from 84 to 72.7 to 42 nm corresponding to normal-and obliqueincidences of 308 and 608, respectively. Later on, they studied the time evolution of dots originating from oblique ion incidence by performing Monte Carlo simulations for GaAs and Si [26]. They found that without rotation, the average number of dots decreases with increasing fluence, while it remains nearly constant for a rotating sample.…”

Section: Resultsmentioning

confidence: 97%

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Formation of nanodots on oblique ion sputtered InP surfaces

Som

Chini

Katharia

et al. 2009

Applied Surface Science

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Section: Resultssupporting

confidence: 71%

Section: Resultsmentioning

confidence: 97%

Formation of nanodots on oblique ion sputtered InP surfaces

Som

Chini

Katharia

et al. 2009

Applied Surface Science

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“…This assumption corresponds to the limit of high rotation frequencies. Dots also appear in MC simulations performed in the high rotation frequency limit for a wide range of parameters [16].…”

Section: Sputtering Of Continuously Rotating Samplementioning

confidence: 91%

A Monte Carlo study of surface sputtering by dual and rotated ion beams

Yasseri

Kree

2010

Nuclear Instruments and Methods in Physics Research Section B:

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Several, recently proposed methods of surface manufacturing based on ion beam sputtering, which involve dual beam setups, sequential application of ion beams from different directions, or sample rotation, are studied with the method of kinetic Monte Carlo simulation of ion beam erosion and surface diffusion. In this work, we only consider erosion dominated situations. The results are discussed by comparing them to a number of theoretical propositions and to experimental findings. Two ion-beams aligned opposite to each other produce stationary, symmetric ripples. Two ion beams crossing at right angle will produce square patterns only, if they are exactly balanced. In all other cases of crossed beams, ripple patterns are created, and their orientations are shown to be predictable from linear continuum theory. In sequential ion beam sputtering we find a very rapid destruction of structures created from the previous beam direction after a rotation step, which leads to a transient decrease of overall roughness. Superpositions of patterns from several rotation steps are difficult to obtain, as they exist only in very short time windows. In setups with a single beam directed towards a rotating sample, we find a non-monotonic dependence of roughness on rotation frequency, with a very pronounced minimum appearing at the frequency scale set by the relaxation of prestructures observed in sequential ion beam setups. Furthermore we find that the logarithm of the height of structures decreases proportional to the inverse frequency

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“…Our simulation method has been described several times, more details can be found in Refs. [8,9,10,11]. We use a lattice gas, solid-on-solid model.…”

Section: Monte Carlo Simulationsmentioning

confidence: 99%

The influence of beam divergence on ion-beam induced surface patterns

Kree

Yasseri

Hartmann

2009

Nuclear Instruments and Methods in Physics Research Section B:

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We present a continuum theory and a Monte Carlo model of self-organized surface pattern formation by ion beam sputtering including effects of beam profiles. Recently, it has turned out that such secondary ion beam parameters may have a strong influence on the types of emerging patterns. We first discuss several cases, for which beam profiles lead to random parameters in the theory of pattern formation. Subsequently we study the evolution of the averaged height profile in continuum theory and find that the typical Bradley-Harper scenario of dependence of ripple patterns on the angle of incidence can be changed qualitatively. Beam profiles are implemented in Monte Carlo simulations, where we find generic effects on pattern formation. Finally, we demonstrate that realistic beam profiles, taken from experiments, may lead to qualitative changes of surface patterns.

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Numerical analysis of quantum dots on off-normal incidence ion sputtered surfaces

Cited by 33 publications

References 28 publications

Formation of nanodots on oblique ion sputtered InP surfaces

Formation of nanodots on oblique ion sputtered InP surfaces

A Monte Carlo study of surface sputtering by dual and rotated ion beams

The influence of beam divergence on ion-beam induced surface patterns

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