Numerical Analysis of In2S3 Layer Thickness, Band Gap and Doping Density for Effective Performance of a CIGS Solar Cell Using SCAPS

Khoshsirat, Nima; Yunus, Nurul Amziah Md

doi:10.1007/s11664-016-4744-6

Cited by 36 publications

(10 citation statements)

References 29 publications

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“…So the low FF may arise because a large barrier exists at the In 2 S 3 /Zn(O,S) interface [35]. The electron affinity (χ e ) of In 2 S 3 is calculated according to Equation (3) [36]:…”

Section: The Reason For the Efficiency Limitation Of Devicesmentioning

confidence: 99%

Promising Cd-free double buffer layer in CZTSSe thin film solar cells

et al. 2020

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Zn(O,S) film is widely used as a Cd-free buffer layer for kesterite thin film solar cells due to its low-cost and eco-friendly characteristics. However, the low carrier concentration and conductivity of Zn(O,S) will deteriorate the device performance. In this work, an additional buffer layer of In 2 S 3 is introduced to modify the properties of the Zn(O,S) layer as well as the CZTSSe layer via a post-annealing treatment. The carrier concentrations of both the Zn(O,S) and CZTSSe layers are increased, which facilitates the carrier separation and increases the open circuit voltage (V OC). It is also found that ammonia etching treatment can remove the contamination and reduce the interface defects, and there is an increase of the surface roughness of the In 2 S 3 layer, which works as an antireflection layer. Consequently, the efficiency of the CZTSSe solar cells is improved by 24% after the annealing and etching treatments. Simulation and experimental results show that a large band offset of the In 2 S 3 layer and defect energy levels in the Zn(O,S) layer are the main properties limiting the fill factor and efficiency of these CZTSSe devices. This study affords a new perspective for the carrier concentration enhancement of the absorber and buffer layers by In-doping, and it also indicates that In 2 S 3 /Zn(O,S) is a promising Cd-free hybrid buffer layer for high-efficiency kesterite solar cells.

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“…So the low FF may arise because a large barrier exists at the In 2 S 3 /Zn(O,S) interface [35]. The electron affinity (χ e ) of In 2 S 3 is calculated according to Equation (3) [36]:…”

Section: The Reason For the Efficiency Limitation Of Devicesmentioning

confidence: 99%

Promising Cd-free double buffer layer in CZTSSe thin film solar cells

et al. 2020

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“…Lambert beer law is used which is based on optical model for estimation of optical parameter [7]. In this work, AFORS-HET automat simulation software is used to simulate AZO/Si and TiO 2 /Si heterojunction solar cell and its various parameters like thickness of silicon wafer, thickness of AZO layer, thickness of TiO 2 layer, doping concentration of donors (N d ), effective conduction band density (N c ), and texturing at different angle is optimized [30]. Texturing of silicon wafer at different angle is performed to study the change in behaviour and performance of solar cell with respect to plane heterojunction solar cell [31,32].…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation for Optimization of Ultra-thin n-type AZO and TiO2 Based Textured p-type c-Si Heterojunction Solar Cells

Yadav

Kumar

2021

Silicon

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A maximum e ciency of 17% for ultra-thin n-type AZO layer and 17.5% for ultra-thin n-type TiO 2 layer based silicon heterojunction solar cell is reported by optimizing its properties which is much higher than practically obtained e ciency signifying a lot of improvements can be performed to improve e ciency of TiO 2 /Si and AZO/Si heterojunction solar cell. AZO layer and TiO 2 layer is used as n-type emitter layer and crystalline silicon wafer is used as p-type (p-cSi) layer for modelling AZO/Si and TiO 2 /Si heterojunctions solar cell respectively using AFORS HET automat simulation software. Various parameters like thickness of AZO, TiO 2 layer, p-cSi layer, doping concentration of donors (Nd) and effective conduction band density (Nc) are optimized. Finally, texturing at different angle is studied and maximum e ciency is reported at 70 µm thick p-type crystalline Silicon (p-cSi) wafer, that can be very helpful for manufacturing low cost HJ solar cells at industrial scale because of thin wafer and removal of additional processing setup required for deposition of amorphous silicon i-layer. Utilization of TiO 2 and Aluminium doped Zinc Oxide as n-type layer and p-cSi as p-type layer can help in producing low cost and e cient heterojunction (HJ) than compared to HJ with intrinsic thin layer HIT solar cells.

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“…However, in both cases, the band gaps of CIGS and In 2 S 3 were xed. Two studies [30,31] explored the effect of the properties of the In 2 S 3 buffer layer on the performance of CIGS solar cells using numerical simulation, but variations in the CIGS absorber layer were not neglected in both studies. Sun et al also examined the effect of the band gap (E g ) of In 2 S 3 and the composition of interfacial layers between In 2 S 3 and CIGS on the e ciency of CIGS solar cells [32] and found that the properties of these interfacial layers exerted a substantial in uence on the performance of the CIGS device.…”

Section: Introductionmentioning

confidence: 99%

A Modeling Study on Utilizing In2S3 as the Buﬀer Layer of Cu(In,Ga)Se2 Based Solar Cell

beyrami

Saadat

Sohbatzadeh

2021

Preprint

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In Cu(In1 − x,Gax)Se (CIGS)-based solar cells, the cadmium sulfide (CdS) layer is conventionally used as a buffer layer. In the current study, the CdS layer was replaced by the Indium sulfide (In2S3) layer, and the impact of various concentrations of Ga in the CIGS absorber, the band gap of the In2S3 buffer layer, and the band gap of the NayCu1−yIn5S8 interfacial layer on the efficiency of these CIGS solar cells were investigated. The results indicated that in the absence of NayCu1−yIn5S8, the optimal performance was obtained with an Eg−In2S3 value of 3.1 eV and the ratio of Ga/(Ga + In) (GGI) = 1, yielding an efficiency of 21.97%. The formation of the NayCu1−yIn5S8 interfacial layer deteriorated the efficiency of the device, and the highest efficiency of the CIGS solar cells with the interfacial layer was 16.33 %.

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Numerical Analysis of In2S3 Layer Thickness, Band Gap and Doping Density for Effective Performance of a CIGS Solar Cell Using SCAPS

Cited by 36 publications

References 29 publications

Promising Cd-free double buffer layer in CZTSSe thin film solar cells

Promising Cd-free double buffer layer in CZTSSe thin film solar cells

Numerical Simulation for Optimization of Ultra-thin n-type AZO and TiO2 Based Textured p-type c-Si Heterojunction Solar Cells

A Modeling Study on Utilizing In2S3 as the Buﬀer Layer of Cu(In,Ga)Se2 Based Solar Cell

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