Numerical 3D modelling of turbulent melt flow in large CZ system with horizontal DC magnetic field—I: flow structure analysis

Krauze, A.; Muižnieks, A.; Mühlbauer, A.; Wetzel, Th.; Ammon, Wilfried von

doi:10.1016/j.jcrysgro.2003.10.071

Cited by 46 publications

(35 citation statements)

References 10 publications

(10 reference statements)

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“…Lipchin and Brown [60] compared three k − ε models for turbulent viscosity and concluded that a low Reynolds number form worked best. Low Reynolds number k − ε models have also been used in [47,61,62]. An alternative to the RANS approach is large-eddy simulation (LES) [46,63].…”

Section: Turbulencementioning

confidence: 99%

Computer Modelling of Bulk Crystal Growth

Yeckel¹,

Derby²

2010

Bulk Crystal Growth of Electronic, Optical &Amp; Optoelectronic Materials

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Section: Turbulencementioning

confidence: 99%

Computer Modelling of Bulk Crystal Growth

Yeckel¹,

Derby²

2010

Bulk Crystal Growth of Electronic, Optical &Amp; Optoelectronic Materials

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“…1.22 [31]. The effect of a horizontal magnetic field on the distribution of electric potential, flow velocity and temperature was studied by this combined method using the InGaSn eutectic melt, which simulates a Si melt within a 20-inch (500-mm) diameter crucible and 165-mm diameter crystal [32]. The LES can be easily combined with a 2D global model, which treats heat and mass transfer of all the parts of the crystal-growth furnace.…”

Section: Analysis Of Heat-and Mass-transfer Processesmentioning

confidence: 99%

Silicon

Hibiya¹,

Hoshikawa²

2010

Bulk Crystal Growth of Electronic, Optical &Amp; Optoelectronic Materials

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“…In the past two decades, extensive work has been devoted to the numerical analyses of bulk crystal growth processes using various models [2][3][4][5][6][7][8][9][10][11]. Most of these models can be generally divided into local models [2][3][4][5] and 2D global models [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Computer modeling of crystal growth of silicon for solar cells

Liu

et al. 2011

Front. Energy

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A computer simulator with a global model of heat transfer during crystal growth of Si for solar cells is developed. The convective, conductive, and radiative heat transfers in the furnace are solved together in a coupled manner using the finite volume method. A three-dimensional (3D) global heat transfer model with 3D features is especially made suitable for any crystal growth, while the requirement for computer resources is kept permissible for engineering applications. A structured/unstructured combined mesh scheme is proposed to improve the efficiency and accuracy of the simulation. A dynamic model for the melt-crystal (mc) interface is developed to predict the phase interface behavior in a crystal growth process. Dynamic models for impurities and precipitates are also incorporated into the simulator.Applications of the computer simulator to Czochralski (CZ) growth processes and directional solidification processes of Si crystals for solar cells are introduced. Some typical results, including the turbulent melt flow in a large-scale crucible of a CZ-Si process, the dynamic behaviors of the mc interface, and the transport and distributions of impurities and precipitates, such as oxygen, carbon, and SiC particles, are presented and discussed. The findings show the importance of computer modeling as an effective tool in the analysis and improvement of crystal growth processes and furnace designs for solar Si material.

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Numerical 3D modelling of turbulent melt flow in large CZ system with horizontal DC magnetic field—I: flow structure analysis

Cited by 46 publications

References 10 publications

Computer Modelling of Bulk Crystal Growth

Computer Modelling of Bulk Crystal Growth

Silicon

Computer modeling of crystal growth of silicon for solar cells

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