Numbers Theory for Lead Sulfide Photoconducting Films

Mahlman, G. W.

doi:10.1063/1.1707863

Cited by 3 publications

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“…Among inorganic compounds, lead sulphide (PbS) is an essential IV-VI group semiconductor with a narrow direct bandgap 0.4 eV at 300 K. It has cubic crystal structure with very high carrier mobility and dielectric constant [4]. PbS semiconductor nanostructures have also achieved great attention because of their potential properties like dielectric [5], photoconductivity [6][7][8], photoelectric [9], mechanical [10], electrical [11,12] thermodynamic [13], photoluminescence [14], optical [15], gas sensing [16] and photocatalytic [17]. These properties depend upon its morphology, surface properties, crystal defects, phase and size which are directly dependent on their preparation conditions and methods.…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric, dielectric and electrical behavior of two-dimensional lead sulphide nanosheets

Afsar

Jamil

Rafiq

2017

Adv. Nat. Sci: Nanosci. Nanotechnol.

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Two-dimensional pure cubic phase lead sulphide (PbS) nanosheets were synthesized using solid state reaction method at ambient pressure and low temperature ~190 °C. From 210 K–300 K, small polaron hopping conduction mechanism was found to be dominant in PbS nanosheets at frequencies 20 Hz–2 MHz. High values of dielectric constant (~200) and electrical conductivity (of the order of 10−3 S m−1 at 300 K) of PbS nanosheets were extracted suggesting that it is a proficient material for capacitive storage devices. A high value of density of states of the order of 1032 eV−1 cm−3 was obtained for PbS nanosheets. The capacitance-voltage (CV) measurements of PbS nanosheets resulted in a stable butterfly loop due to switching of ferroelectric polarization at 300 K. The permittivity calculated at 0 V capacitance was ~150 and the dielectric loss remained below ~0.50. The polarization-voltage (QV) measurements showed a remnant polarization 23 µC cm−2 in PbS nanosheets. The leakage current density was below 0.5 mA cm−2 in the range ±5 V.

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Section: Introductionmentioning

confidence: 99%

Ferroelectric, dielectric and electrical behavior of two-dimensional lead sulphide nanosheets

Afsar

Jamil

Rafiq

2017

Adv. Nat. Sci: Nanosci. Nanotechnol.

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Photosensitivity in Epitaxial PbS Films

Riedl¹,

Schoolar²

1968

Journal of Applied Physics

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This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 129.174.21.5 On: Sun, 21 Dec 2014 22:48:45 5086 D. J. WHITEhere) where multiple reflections are dominant, the problem has not been solved to the author's knowledge. Such a solution would seem to require the matching of the modes (presumably an infinite sum) in the semiconductor-filled portion of the guide to the modes (the dominant plus whatever cutoff modes necessary) in the empty guide at the semiconductor interfaces. Such a solution might also account for the nonzero ellipticity.The approach used here is based on the semiclassical equation m*dv/dt+m*v/r = eE+e(vXfl/c) (5) and the assumption that the films are homogeneous. In fact the films are dendritic in structure l2 . 13 and an analysis of the form of Eq. (5) does not account for the large dc magnetoresistance obtained from them. Precisely what effect this dendritic structure should have on the microwave analysis is not clear. ACKNOWLEDGMENTThe author is indebted to M. Knotek for his help in the experiments and calculations, D. A. Collins for mounting the films and making the dc measurements, and to H. H. Wieder, who directed the work.A study has been made of the photosensitivity in epitaxial PbS films which were sensitized by heat treatments in air or sulfur vapor. The sensitizing process results in the formation of narrow lines of material which are more p type than the host film. The resultant junctions are responsible for the photosensitivity.The junctions are associated with crystal defects which are faintly visible under a microscope and appear as lines running in (100 > directions. Introduction of these lines can be sufficiently controlled so that only a few are introduced into a sample. This enables individual junctions to be studied. Various properties of the epitaxial films were determined and compared to the corresponding properties of the well-known polycrystalline PbS detectors.

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``Shunt Path'' Photoconduction in Lead Sulfide Films

Mahlman¹

1966

Journal of Applied Physics

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Numbers Theory for Lead Sulfide Photoconducting Films

Cited by 3 publications

References 4 publications

Ferroelectric, dielectric and electrical behavior of two-dimensional lead sulphide nanosheets

Ferroelectric, dielectric and electrical behavior of two-dimensional lead sulphide nanosheets

Photosensitivity in Epitaxial PbS Films

``Shunt Path'' Photoconduction in Lead Sulfide Films

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