1997
DOI: 10.1016/s0379-6779(97)03989-1
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Nuclei of dark spots in organic EL devices: detection by DFM and observation of the microstructure by TEM

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Cited by 40 publications
(42 citation statements)
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“…A completely different form of depth profiling is scanning of the device cross section with some surface-specific methods such as the scanning electron microscopy (SEM) or the scanning ion microscopy (SIM), where the contrast of the image may provide information about diffusion or migration processes. 196,200 …”
Section: Depth Profiling Techniquesmentioning
confidence: 99%
“…A completely different form of depth profiling is scanning of the device cross section with some surface-specific methods such as the scanning electron microscopy (SEM) or the scanning ion microscopy (SIM), where the contrast of the image may provide information about diffusion or migration processes. 196,200 …”
Section: Depth Profiling Techniquesmentioning
confidence: 99%
“…In this case spectroscopic methods such as scanning tunneling microscopy (STM) [12], transmission electron microscopy (TEM) [13], scanning electron microscopy (SEM) [14] and atomic force microscopy (ATM) [15] are used. Causes for device failures due to crystallization and inter diffusion of organic layers were reported by Adachi et al [16] and Han et al [17].…”
Section: Introductionmentioning
confidence: 99%
“…Exposure to ambient conditions leads to the formation of nonemissive areas ͑dark spots͒ that result in a decrease in device luminescence. [2][3][4][5][6][7][8] Although the dark spots problem can be controlled by operating OLEDs in inert atmosphere, it is still of considerable practical interest to understand the details of the dark spots origins.…”
mentioning
confidence: 99%