“…A completely different form of depth profiling is scanning of the device cross section with some surface-specific methods such as the scanning electron microscopy (SEM) or the scanning ion microscopy (SIM), where the contrast of the image may provide information about diffusion or migration processes. 196,200 …”
Figure 2. Typical normalized L−t curve, showing the experimental data (full circles), together with the fit using eq 2 up to 1100 h (dotted line), and up to 2200 h (full line). Reprinted with permission from ref 32.
“…A completely different form of depth profiling is scanning of the device cross section with some surface-specific methods such as the scanning electron microscopy (SEM) or the scanning ion microscopy (SIM), where the contrast of the image may provide information about diffusion or migration processes. 196,200 …”
Figure 2. Typical normalized L−t curve, showing the experimental data (full circles), together with the fit using eq 2 up to 1100 h (dotted line), and up to 2200 h (full line). Reprinted with permission from ref 32.
“…In this case spectroscopic methods such as scanning tunneling microscopy (STM) [12], transmission electron microscopy (TEM) [13], scanning electron microscopy (SEM) [14] and atomic force microscopy (ATM) [15] are used. Causes for device failures due to crystallization and inter diffusion of organic layers were reported by Adachi et al [16] and Han et al [17].…”
“…Exposure to ambient conditions leads to the formation of nonemissive areas ͑dark spots͒ that result in a decrease in device luminescence. [2][3][4][5][6][7][8] Although the dark spots problem can be controlled by operating OLEDs in inert atmosphere, it is still of considerable practical interest to understand the details of the dark spots origins.…”
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