2012
DOI: 10.1016/j.jcrysgro.2012.03.014
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Nucleation of 3C-SiC associated with threading edge dislocations during chemical vapor deposition

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Cited by 2 publications
(1 citation statement)
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“…Island 1 develops until it coalesces with other islands on the same terrace or the edges of faces. In terms of traditional 2D nucleation growth mechanism, edge dislocations acting as nucleation enhancement sites for crystal growth have been reported [10][11]. The formation of nucleation and growth at edge dislocation sites is usually assumed to originate from high location and ultimately result in the surrounding solute molecules flow to the edge dislocations.…”
Section: Atomic Force Microscopy (Afm) Investigations and Computationmentioning
confidence: 99%
“…Island 1 develops until it coalesces with other islands on the same terrace or the edges of faces. In terms of traditional 2D nucleation growth mechanism, edge dislocations acting as nucleation enhancement sites for crystal growth have been reported [10][11]. The formation of nucleation and growth at edge dislocation sites is usually assumed to originate from high location and ultimately result in the surrounding solute molecules flow to the edge dislocations.…”
Section: Atomic Force Microscopy (Afm) Investigations and Computationmentioning
confidence: 99%