Nucleation-Controlled Metal-Induced Lateral Crystallization of Amorphous Si<sub>1-x</sub>Ge<sub>x</sub> with Whole Ge Fraction on Insulator

Sadoh, Taizoh; Toko, Kaoru; Kanno, Hiroshi; Masumori, Shunji; Itakura, Masaru; Kuwano, Noriyuki; Miyao, Masanobu

doi:10.1143/jjap.47.1876

Cited by 8 publications

(5 citation statements)

References 8 publications

(13 reference statements)

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“…4) The low-temperature (<550 C) SPC of a-Si and a-SiGe has been realized by using the catalytic effects of various metals (Au, Ag, and Ni). [6][7][8][9][10][11][12][13] This metal-induced crystallization (MIC) has achieved poly-Si and poly-SiGe with $10 mm grains on insulating films. Recently, Al-induced crystallization (AIC), in which a-Si/Al stacked structures are employed, has attracted much interest, because it realizes (111)-oriented poly-Si with large grains at a low temperature (<450 C).…”

Section: Introductionmentioning

confidence: 99%

Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si_1-xGe_x (x: 0–1) on Insulating Substrate

Kurosawa

Tsumura

Sadoh

et al. 2009

jjap

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The effects of interfacial oxide layers on the Al-induced crystallization (AIC) of amorphous Si 1Àx Ge x (x: 0 -1) films on an insulator at a low temperature (<500 C) have been investigated. In the case of Si, the inversion of the Si/Al layers was achieved for samples with and without interfacial oxide layers between the Si and Al layers. In addition, it was found that the existence of interfacial oxide layers was required to obtain large grain ($100 mm) polycrystalline Si with a (111) orientation. However, in the case of SiGe, the interfacial oxide layers significantly retarded AIC growth. Consequently, layer exchange occurred inhomogenously, which resulted in inhomogenous crystallization even after a long annealing time (410 C, 100 h). To solve this problem, the effects of interfacial oxide thickness on AIC growth were investigated. As a result, complete layer exchange was achieved for samples with the whole Ge fractions (x: 0 -1) by controlling the air exposure time. A qualitative model is presented.

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Section: Introductionmentioning

confidence: 99%

Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si_1-xGe_x (x: 0–1) on Insulating Substrate

Kurosawa

Tsumura

Sadoh

et al. 2009

jjap

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“…The precursor amorphous Si films did not contain the crystal phase of Si that suppresses crystallization. 16) In the observation results shown in Fig. 2, 80-and 5-m-long poly-Si crystals were grown on the CVD and sputtered precursor films, respectively.…”

Section: Resultsmentioning

confidence: 99%

Crystallization Using Biomineralized Nickel Nanodots of Amorphous Silicon Thick Films Deposited by Chemical Vapor Deposition, Sputtering and Electron Beam Evaporation

Nishida

Fuse

Furuta

et al. 2012

Jpn. J. Appl. Phys.

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The fabrication of polycrystalline silicon (poly-Si) films by metal-induced lateral crystallization (MILC) using biomineralized Ni nanodots was investigated. The dependence of film crystallinity on the deposition method for the amorphous Si precursor films, such as plasma-enhanced chemical vapor deposition (PECVD), sputtering deposition, or electron beam evaporation, was evaluated. The preparation of thick films and their crystallization are discussed. The poly-Si film obtained by CVD had a large residual stress (1.4 GPa). In contrast, the stress of the sputtered film was very low and had firm adherence to the substrate. Thus, Si films over 1 µm thick can be easily prepared by sputtering; however, the crystallite size in the films is very small because crystallization is prevented by a high-density of impurities in the sputtered films. Therefore, the preparation of poly-Si films with adhesion layers was attempted by CVD. Si films thicker than 100 nm without an adhesion layer were exfoliated from the substrates. Poly-Si films of 270 nm thick with large crystallite sizes above 20 µm were prepared with an adhesion layer using the CVD method, and the concentrations of impurities, such as carbon and Ni, in the obtained CVD film were very low.

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“…These values are almost the same as the result of a previous study, where the Ge composition is 0.37 for the SiGe film deposited at F S ¼ 3 sccm and F G ¼ 0:05 sccm. 9) Since the crystallization temperature decreases with increasing Ge composition in the solid-phase crystallization of amorphous SiGe, 13) it is considered that the Ge composition change affects the film structure. In Fig.…”

Section: Resultsmentioning

confidence: 99%

Properties of SiGe Films Fabricated by Reactive Thermal Chemical Vapor Deposition Using Lamp Heating

Wakagi¹,

Suzumura

Kagatsume

et al. 2010

Jpn. J. Appl. Phys.

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The structural and electrical properties of SiGe films deposited by reactive thermal chemical vapor deposition using a lamp heating system with a source gas mixture of GeF 4 and Si 2 H 6 were investigated. In the SiGe film depositions with respective GeF 4 and Si 2 H 6 flow rates of 0.06 and 3 sccm, the film structure changed from crystalline to amorphous during the film growth. The results of secondary ion mass spectroscopy analysis and high-temperature deposition suggest that the gas phase reactions cause the structural change. To suppress the gas phase reactions, lowpressure depositions are investigated. The SiGe film deposited at a relatively low pressure of 400 Pa shows good crystallinity. The thin-film transistor with this SiGe film also reveals a high p-channel mobility of about 10 cm 2 ÁV À1 Ás À1 . #

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Nucleation-Controlled Metal-Induced Lateral Crystallization of Amorphous Si_1-xGe_x with Whole Ge Fraction on Insulator

Cited by 8 publications

References 8 publications

Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si_1-xGe_x (x: 0–1) on Insulating Substrate

Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si_1-xGe_x (x: 0–1) on Insulating Substrate

Crystallization Using Biomineralized Nickel Nanodots of Amorphous Silicon Thick Films Deposited by Chemical Vapor Deposition, Sputtering and Electron Beam Evaporation

Properties of SiGe Films Fabricated by Reactive Thermal Chemical Vapor Deposition Using Lamp Heating

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Nucleation-Controlled Metal-Induced Lateral Crystallization of Amorphous Si1-xGex with Whole Ge Fraction on Insulator

Cited by 8 publications

References 8 publications

Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex (x: 0–1) on Insulating Substrate

Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex (x: 0–1) on Insulating Substrate

Crystallization Using Biomineralized Nickel Nanodots of Amorphous Silicon Thick Films Deposited by Chemical Vapor Deposition, Sputtering and Electron Beam Evaporation

Properties of SiGe Films Fabricated by Reactive Thermal Chemical Vapor Deposition Using Lamp Heating

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Product

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Nucleation-Controlled Metal-Induced Lateral Crystallization of Amorphous Si_1-xGe_x with Whole Ge Fraction on Insulator

Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si_1-xGe_x (x: 0–1) on Insulating Substrate

Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si_1-xGe_x (x: 0–1) on Insulating Substrate