Nucleation-Controlled Growth of Nanoparticles by Atomic Layer Deposition

Thermal atomic layer deposition (ALD) of metal has generally been achieved at high temperatures of around 300°C or at relatively low temperatures with highly reactive counter reactants, including plasma radicals and O 3 , which can induce severe damage to substrates. Here, the growth of metallic Pt layers by ALD at a low temperature of 80°C is achieved by using [(1,2,5,6-η)-1,5-hexadiene]-dimethyl-platinum(II) (HDMP) and O 2 as the Pt precursor and counter reactant, respectively. ALD results in the successful growth of continuous Pt layers at the low temperature without any reactive reactants owing to the low activation energy of the HDMP precursor for surface reactions. Because of the high reactivity of the precursor, the growth of a pure Pt layer is achieved on various thermally weak substrates, leading to the fabrication of high-performance conductive cotton fibers by ALD. A capacitive-type textile pressure sensor is successfully demonstrated by stacking elastomeric rubber-coated conductive cotton fibers perpendicularly and integrating them onto a fabric with a 7 × 8 array configuration to identify the features of the applied pressure, which can be effectively utilized as a new platform for future wearable and textile electronics. INTRODUCTIONAtomic layer deposition (ALD) has widely attracted considerable interest for various high technologies, such as semiconductor devices and display devices, 1-3 because of its superb ability to deposit ultrathin films with excellent controllability and conformality even on complex three-dimensional (3D) structures. 1-8 Based on these superior properties, ALD has been intensively studied for several applications. In particular, textile electronics using the ALD is one of the promising fields since several materials can be readily deposited at temperatures lower than 150°C by ALD, leading to the effective functionalization of thermally fragile substrates such as plastics, cellulose papers and polymeric textiles. [9][10][11][12] Chen et al. 13 demonstrated hydrophobic silk fabrics with a high laundering durability and robustness due to a TiO 2 coating deposited by ALD. However, in the case of metal ALD, since temperatures as high as 300°C are generally required to achieve successful deposition with the thermal energy of the precursor reactions, it is difficult to deposit conformal metal films onto thermally weak substrates using ALD, causing difficulties in a wide range of applications, including textile electronics. 14,15 To ensure successful metal ALD at low temperatures, ALD in which the

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“…32 According to the isothermal model based on nucleation incubation, the surface coverage of deposited Pt can be calculated as follows:…”

Section: Resultsmentioning

confidence: 99%

Highly conductive and flexible fiber for textile electronics obtained by extremely low-temperature atomic layer deposition of Pt

et al. 2016

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“…That is nucleation delay during the initial ALD cycles of noble metals occurs and has been reported to be due to the lack of adsorption sites [39,40] and/or large differences in the surface energy between substrate and noble metal [41,42]. Additional EDX data shown in Fig.…”

Section: Resultsmentioning

confidence: 79%

Uniform ALD deposition of Pt nanoparticles within 1D anodic TiO2 nanotubes for photocatalytic H2 generation

Yoo

Zazpe

Cha

et al. 2018

Electrochemistry Communications

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In the present work we investigate the utilization of Pt nanoparticles produced by atomic layer deposition (ALD) within anodic TiO 2 nanotube (NT) layers for photocatalytic H 2 production. By varying numbers of ALD cycles, Pt nanoparticles with different diameters, uniformly decorating the tube walls were produced. The Pt nanoparticle size (2-15 nm), the Pt mass loading and areal density were strongly dependent on the number of Pt ALD cycles. The deposited Pt nanoparticles turned out to be highly effective as co-catalyst for photocatalytic H 2 generation. A most effective performance for solar light photocatalysis was reached after 26 ALD cycles (yielding an optimal areal coverage with particles of a diameter ≈ 7 nm). For UV light optimum photocatalytic efficiency was reached after 40 ALD cycles.

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Section: Qd Sensitizers In Qdsscsmentioning

confidence: 99%

“…71,72 Earlier work from our group by Brennan et al 73 showed that ALD led to deposition of different sizes of quantum dots by limiting the growth to within the ALD nucleation regime. 71 In the same work, 73 Brennan et al reported solid-state PV devices on mesostructured TiO 2 sensitized by ALD-grown CdS QDs. The growth rate of CdS showed two significantly different regimes as illustrated in Fig.…”

Section: Qd Sensitizers In Qdsscsmentioning

confidence: 99%

Atomic layer deposition in nanostructured photovoltaics: tuning optical, electronic and surface properties

2015

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Nanostructured materials offer key advantages for third-generation photovoltaics, such as the ability to achieve high optical absorption together with enhanced charge carrier collection using low cost components. However, the extensive interfacial areas in nanostructured photovoltaic devices can cause high recombination rates and a high density of surface electronic states. In this feature article, we provide a brief review of some nanostructured photovoltaic technologies including dye-sensitized, quantum dot sensitized and colloidal quantum dot solar cells. We then introduce the technique of atomic layer deposition (ALD), which is a vapor phase deposition method using a sequence of self-limiting surface reaction steps to grow thin, uniform and conformal films. We discuss how ALD has established itself as a promising tool for addressing different aspects of nanostructured photovoltaics. Examples include the use of ALD to synthesize absorber materials for both quantum dot and plasmonic solar cells, to grow barrier layers for dye and quantum dot sensitized solar cells, and to infiltrate coatings into colloidal quantum dot solar cell to improve charge carrier mobilities as well as stability. We also provide an example of monolayer surface modification in which adsorbed ligand molecules on quantum dots are used to tune the band structure of colloidal quantum dot solar cells for improved charge collection. Finally, we comment on the present challenges and future outlook of the use of ALD for nanostructured photovoltaics.

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Nucleation-Controlled Growth of Nanoparticles by Atomic Layer Deposition

Cited by 59 publications

References 63 publications

Highly conductive and flexible fiber for textile electronics obtained by extremely low-temperature atomic layer deposition of Pt

Highly conductive and flexible fiber for textile electronics obtained by extremely low-temperature atomic layer deposition of Pt

Uniform ALD deposition of Pt nanoparticles within 1D anodic TiO2 nanotubes for photocatalytic H2 generation

Atomic layer deposition in nanostructured photovoltaics: tuning optical, electronic and surface properties

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