Nucleation and solidification of laterally grown silicon micro-films on amorphous substrates using the VLS mechanism

LeBoeuf, J. L.; Quitoriano, Nathaniel J.

doi:10.1016/j.jcrysgro.2013.12.043

Cited by 8 publications

(9 citation statements)

References 13 publications

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“…The observation in figures 4(a) and (b) can be understood in the following manner, as the size of the Au catalyst increases, both the vapor-liquid interface and the volume of the Au are expected to increase. A previous study by LeBoeuf et al has reported that the growth is not limited by diffusion of the gas but rather by the reaction kinetics at the surface [15]. Since the experimental conditions in this paper are similar to their conditions, it is thus suggested that the more surface, the more Ge can be absorbed by the Au (the triangle shape of the microcrucible leads to larger vapor-liquid interface with more Au).…”

Section: Resultssupporting

confidence: 60%

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Effects of Au catalyst geometry on Ge films grown laterally on Si using the vapor–liquid–solid mechanism

Wang

Tong

Quitoriano

2019

J. Phys. D: Appl. Phys.

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A lateral epitaxial growth technique has been demonstrated to grow high-quality Ge micro-films on Si at low temperatures using the vapor–liquid–solid mechanism. These Ge films were grown within a confined structure to foster horizontal growth in the presence of Au catalyst. In this work the size and geometric shape of the Au catalyst were shown to impact the film size and morphology. In particular, a general trend was observed, as the size of Au catalyst increased the Ge film size initially increased as well until the Ge film size plateaued and eventually decreased. This phenomenon is described by a model, which is a function of Au catalyst size and GeH4 dose and can be used to estimate the final Ge film size. In general, a large-sized Au catalyst absorbs more Ge because of its large vapor–liquid interface but it also requires more Ge to saturate the liquid, and therefore this fact results in a peak in the plot of the Ge film size versus the Au size. In addition, a large GeH4 dose due to more absorption of GeH4 leads to multiple nucleation sites in a small Au catalyst, while a micro-crucible with a larger Au volume or reduced vapor–liquid interface can help to realize single nucleation. These results helped in designing two-opening Au catalysts with asymmetric sides, which preferentially nucleates a large crystal near the wider side.

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Section: Resultssupporting

confidence: 60%

“…In order to address this challenge, a lateral growth technique has recently been developed to grow thin films on a substrate [14][15][16][17][18]. Lateral thin film growth is similar to traditional nanowire growth because the VLS mechanism is also used in the growth process.…”

Section: Introductionmentioning

confidence: 99%

Effects of Au catalyst geometry on Ge films grown laterally on Si using the vapor–liquid–solid mechanism

Wang

Tong

Quitoriano

2019

J. Phys. D: Appl. Phys.

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“…Recently, the catalytic effects of metals used in VLS growth have also been explored to realize lateral epitaxy of latticemismatched semiconductors [10][11][12]. This is different from the heteroepitaxy paradigm of nanowires which takes advantage of its high aspect ratio [3].…”

Section: Introductionmentioning

confidence: 99%

“…These microcrucibles are composed of metal catalysts (e.g. Au) located under the capping layers made of plasma-enhanced chemical vapor deposition (PECVD) grown SiO 2 /Si 3 N 4 [11]. During the growth process, the precursor atoms crack preferentially on the metal catalyst and due to the presence of the capping layers, the epilayer is forced to grow laterally (as opposed to vertical growth).…”

Section: Introductionmentioning

confidence: 99%

“…This also means that the epilayer and the substrate have direct electrical connection, unlike lateral aspect ratio trapping in which the epilayer is grown on SiO 2 layer [17]. In addition, compared to common template-assisted selective epitaxy [18], the use of metal as a catalyst could improve the growth rate and selectivity [10][11][12]19] and reduce the growth temperature [11,12,20]. All these combined make the metal-catalyzed lateral epitaxy attractive for Si photonics where well-defined and compact InP-based photonics components need to be grown selectively on a pre-patterned Si substrate using low temperature process(es).…”

Section: Introductionmentioning

confidence: 99%

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Nucleation of InP on Si under micro-crucibles at ultra-high vacuum using a two-step VLS process

Suwito,

Haffouz,

Dalacu

et al. 2024

J. Phys. D: Appl. Phys.

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We reported nucleation mechanisms of InP directly on Si (8% lattice mismatch) under confined structures, called micro-crucibles, at ultra-high vacuum (UHV) by chemical beam epitaxy (CBE). These micro-crucibles are used to induce lateral growth in the presence of a micro-scale Au catalyst. It is found that at this UHV condition, the kinetics is dictated predominantly by adatom surface diffusion. Using a two-step growth process ((1) In-only exposure, then, (2) simultaneous In and P exposures), InP islands have been successfully nucleated on Si substrates under micro-crucible structures. The nucleation of these InP islands strongly depends on the metal catalyst location relative to the micro-crucible opening with metal catalysts residing closer to the opening having a higher chance to get incorporated with In and P atoms. Importantly, we found that using smaller micro-crucibles with double openings can increase the possibility of having metal catalysts reside near either opening and nucleate InP under micro-crucibles.

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Growth conditions of metal-catalyzed, laterally grown Ge films on Si

Wang¹,

Quitoriano²

2020

Thin Solid Films

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Nucleation and solidification of laterally grown silicon micro-films on amorphous substrates using the VLS mechanism

Cited by 8 publications

References 13 publications

Effects of Au catalyst geometry on Ge films grown laterally on Si using the vapor–liquid–solid mechanism

Effects of Au catalyst geometry on Ge films grown laterally on Si using the vapor–liquid–solid mechanism

Nucleation of InP on Si under micro-crucibles at ultra-high vacuum using a two-step VLS process

Growth conditions of metal-catalyzed, laterally grown Ge films on Si

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