Nucleation and growth of Ge on Si(111) by MBE with additional atomic hydrogen irradiation studied by scanning tunneling microscopy

Okada, Masahisa; Muto, Akiyoshi; Ikeda, Hiroya; Zaima, Shigeaki

doi:10.1016/s0022-0248(98)00041-4

Cited by 10 publications

(5 citation statements)

References 17 publications

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“…This observation is not unexpected since surface diffusion is required to produce the instabilities driven by diffusion-bias currents and hydrogen adsorption is known to dramatically reduce the surface mobility of adatoms. 35 Therefore, large amplitude, longwavelength growth instabilities can be suppressed at the cost of increased atomic-scale roughness created by shot noise of the deposition flux.…”

Section: Discussionmentioning

confidence: 99%

Morphology of low-temperature homoepitaxial growth on laser-textured Ge(001)

Raviswaran

Cahill

2004

Phys. Rev. B

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We delineate the growth conditions of temperature, substrate vicinality, and hydrogen termination that produce rough and smooth crystal growth of Ge by molecular beam epitaxy. Ge͑001͒ substrates are modified by laser texturing to produce all azimuths of miscuts in the range 0°ϽϽ10°within a 4 m diameter laser dimple. We deposit Ge on these modified substrates over a wide range of growth temperatures 150°CϽT Ͻ400°C, with and without an atomic hydrogen flux of 3ϫ10 13 cm Ϫ2 s Ϫ1 , and characterize the morphologies by atomic-force microscopy. Ridge-shaped growth instabilities dominate the morphology for miscuts toward ͗110͘ directions; in regions with miscuts toward ͗100͘ the morphology is relatively smooth. Hydrogen flux suppresses the growth-mound instability at small miscuts and reduces the epitaxial critical thickness at large miscuts.

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Section: Discussionmentioning

confidence: 99%

Morphology of low-temperature homoepitaxial growth on laser-textured Ge(001)

Raviswaran

Cahill

2004

Phys. Rev. B

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Section: Introductionmentioning

confidence: 99%

“…The formation of two-dimensional (2D) islands in vapor-phase epitaxy has been studied for metals − and semiconductors − to grow high-quality thin films. Scanning tunneling microscopy has shown that the nucleation density ( N ) and shape of 2D islands depend on substrate temperature ( T s ) and/or deposition rate. − These 2D islands exhibit round, triangular, , square, or complicated fractal shapes. ,, To understand their growth mechanism, various models for kinetic Monte Carlo simulations − and analytical theories , have been developed. The primary physical parameters determining morphology are diffusion coefficients for atoms on a substrate surface ( D s ) and along the edge of a 2D island ( D edg ). − The edge diffusion behavior is particularly important in dynamics because sites that are stable for atoms dominate the island shape.…”

Section: Introductionmentioning

confidence: 99%

“…However, in contrast to epitaxial growth, weak bonding arises with physical adsorption between a molecule and a substrate. Therefore, the surface conditions of the substrate, such as roughness or surface energy, are additional experimental parameters to consider in growth. ,− Because organic molecules actively diffuse on an amorphous substrate, in contrast to atoms in epitaxial growth, organic 2D island has N value of 10 –1 –10 2 μm –2 , ,− ,− which is smaller than the value of 10 1 –10 4 μm –2 for epitaxial growth. − Consequently, larger 2D islands form on a substrate, enabling atomic force microscopy (AFM) investigation. − ,− ,− With respect to shape, 2D islands of organic small molecules tend to form randomly on the substrate with distorted round or fractal shapes. ,− ,− ,− This is probably attributed to weak interaction of organic molecules to an amorphous substrate.…”

Section: Introductionmentioning

confidence: 99%

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Nucleation Density and Shape of Submonolayer Two-Dimensional Islands of Diphenyl Dinaphthothienothiophene in Vacuum Deposition

2019

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Sub-monolayer two-dimensional (2D) islands of diphenyl dinaphthothienothiophene with various shapes and densities (N) were formed on a SiO2/Si substrate by controlling substrate temperature and the surface treatment for SiO2 in vacuum deposition to investigate the growth mechanism based on their morphology. The statistical analysis shows that the 2D islands have complex shapes when N is small, and there is a constant relationship between N and the shape complexity of the 2D islands, regardless of the deposition conditions. Since the surface morphology is determined by diffusion coefficients for admolecules on a substrate surface (Ds) and along the edge of a 2D island (Dedg), the relationship between (N, shape complexity) and (Ds, Dedg) is studied. The statistical analysis indicates that Dedg is almost independent of the surface conditions and is instead determined by interactions with molecules constructing the 2D island. Therefore, Dedg is considered as a material-dependent parameter to control the morphology for growing high-quality films in vacuum deposition.

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“…10 Electronic and lattice structure of Ge and Si adsorption on Si(111) -(7ϫ7) have been extensively studied. [11][12][13][14] Understanding the dependence of the island size and uniformity on the deposition conditions is of importance. The controlled growth of ordered Ge nanostructures at surface remains a difficult challenge.…”

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confidence: 99%

Formation of ordered Ge quantum dots on the Si(111)–(7×7) surface

Zhang

Liang

Xie

et al. 2001

Applied Physics Letters

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We present a pathway for the formation of ordered Ge quantum dots on Si(111)–(7×7) substrate. Self-assembled growth of Ge quantum dots on the Si(111)–(7×7) surface has been investigated using scanning tunneling microscopy. The Ge is grown on the substrate by solid phase epitaxy at room temperature. It has been found that the deposited submonolayer Ge can aggregate and form ordered Ge quantum dots on the surface through controlling the annealing temperature. The formation of ordered Ge quantum dots is due to the preferential adsorption sites of Ge on Si(111)–(7×7). The formed Ge quantum dots may have a great potential in the application of nanodevices.

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Nucleation and growth of Ge on Si(111) by MBE with additional atomic hydrogen irradiation studied by scanning tunneling microscopy

Cited by 10 publications

References 17 publications

Morphology of low-temperature homoepitaxial growth on laser-textured Ge(001)

Morphology of low-temperature homoepitaxial growth on laser-textured Ge(001)

Nucleation Density and Shape of Submonolayer Two-Dimensional Islands of Diphenyl Dinaphthothienothiophene in Vacuum Deposition

Formation of ordered Ge quantum dots on the Si(111)–(7×7) surface

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