“…First of all, we study the mechanism of interstitial cobalt accumulation on divacancies and the transformation of thus formed agglomerates of cobalt interstitials into Co-Si phase nuclei. This allows us to extend the earlier suggested model, 2,5 where only vacancies were considered as nucleation centers for Btype CoSi 2 clusters. Second, we consider in detail various aspects of phosphorus atom interaction with self point defects (interstitials, vacancies, and divacancies) in silicon, which are directly relevant to the model suggested in Paper I, but not sufficiently clarified in the literature.…”