Nucleation and growth mode of the molecular beam epitaxy of GaN on 4H–SiC exploiting real time spectroscopic ellipsometry

Losurdo, Maria; Bruno, Giovanni; Kim, T.H.; Choi, Sunghee; Brown, April S.; Moto, Akihiro

doi:10.1016/j.jcrysgro.2005.07.016

Cited by 13 publications

(4 citation statements)

References 13 publications

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“…Furthermore, additional examples of SE real-time control of nucleation and heteroepitaxial growth of III-Nitrides (e.g., GaN, InN, etc.) by molecular beam epitaxy are provided by Losurdo et al ( 2005 ) and Cobet et al ( 2003 ), giving evidence of the versatility of real-time SE to monitor (detect) at the nanoscale, independent of the deposition methodology and material systems.…”

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confidence: 99%

Spectroscopic ellipsometry and polarimetry for materials and systems analysis at the nanometer scale: state-of-the-art, potential, and perspectives

et al. 2009

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This paper discusses the fundamentals, applications, potential, limitations, and future perspectives of polarized light reflection techniques for the characterization of materials and related systems and devices at the nanoscale. These techniques include spectroscopic ellipsometry, polarimetry, and reflectance anisotropy. We give an overview of the various ellipsometry strategies for the measurement and analysis of nanometric films, metal nanoparticles and nanowires, semiconductor nanocrystals, and submicron periodic structures. We show that ellipsometry is capable of more than the determination of thickness and optical properties, and it can be exploited to gain information about process control, geometry factors, anisotropy, defects, and quantum confinement effects of nanostructures.

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Section: Introductionmentioning

confidence: 99%

Spectroscopic ellipsometry and polarimetry for materials and systems analysis at the nanometer scale: state-of-the-art, potential, and perspectives

et al. 2009

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“…Growth is performed under various Ga/N flux ratios at growth temperatures in the range 710-780 . In-situ spectroscopic ellipsometry (SE) is a complementary and powerful method for monitoring the growth process, and characterizing film properties [5].In this paper, we report on an in-situ SE investigation of homoepitaxial GaN growth on GaN template substrates by PAMBE. We discuss SE investigations related to the growth and surface roughening, as well as Ga adsorption and desorption dynamics with various Ga/N ratio conditions.…”

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Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy

Kim

Choi

et al. 2006

Phys. Status Solidi (c)

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The growth of GaN by plasma assisted molecular beam epitaxy on GaN template substrates (GaN on sapphire) is investigated with in-situ multi-channel spectroscopic ellipsometry. Growth is performed under various Ga/N flux ratios at growth temperatures in the range 710-780 . In-situ spectroscopic ellipsometry (SE) is a complementary and powerful method for monitoring the growth process, and characterizing film properties [5].In this paper, we report on an in-situ SE investigation of homoepitaxial GaN growth on GaN template substrates by PAMBE. We discuss SE investigations related to the growth and surface roughening, as well as Ga adsorption and desorption dynamics with various Ga/N ratio conditions. In addition, we report on the thermal roughening of the GaN template resulting from surface decomposition. Optimized growth conditions are found by comparing SE spectra at room temperature, surface morphology characterised by atomic force microscopy (AFM) and structure by high resolution X-ray diffraction (HRXRD).

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“…plasma assisted MBE on Si-face 6H-SiC substrates with a two-step process consisting of the deposition of a thin layer deposited at 350 °C, followed by its annealing and the subsequent deposition of the epitaxial layer. Substrates underwent a degreasing and wet chemical cleaning using the RCA procedure followed by in-situ cleaning using a Ga-flash off consisting of three cycles of 2 ML Ga deposited at 650 o C, followed by Ga desorption for 5 min at 825 o C [8]. After the cleaning, a sharp (1x3) RHEED pattern, indicative of a clean Si-face surface, was observed.…”

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“…power of 500 W and at a nitrogen flow rate of 0.95 sccm. These conditions yield a thin (1.2 ML) of nitrided layer [8]. A low-temperature InN nucleation layer approximately 50 nm thick was grown at 350 °C using an In flux of 2x10 -7 Torr.…”

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Growth of InN on 6H‐SiC by plasma assisted molecular beam epitaxy

Brown

Kim

Choi

et al. 2006

Phys. Status Solidi (c)

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We have investigated the growth of InN films by plasma assisted molecular beam epitaxy on the Si-face of 6H-SiC(0001). Growth is performed under In-rich conditions using a two-step process consisting of the deposition of a thin, low-temperature 350 °C InN buffer layer, followed by the subsequent deposition of the InN epitaxial layer at 450 °C. The effect of buffer annealing is investigated. The structural and optical evolution of the growing layer has been monitored in real time using RHEED and spectroscopic ellipsometry. Structural, morphological, electrical and optic properties are discussed.1 Introduction InN is a very attractive material for future optical and electronic devices. This is because of its outstanding material properties such as the smallest effective mass, largest mobility, highest peak and saturation velocities, and smallest direct band gap in family of nitride semiconductors. To date, InN has been the least studied of the III-nitride materials because of the difficulty in growing goodquality InN without excess In or In droplets on the surface, or polycrystallinity. The bandgap of InN has long been thought to be approximately 1.9 eV. Recently, various values of the optical band gap from 0.7 eV to 1.7 eV have been correlated with the measured free electron concentration [1]. Progress has been made in the growth of high-quality InN. InN is being grown predominantly by molecular beam epitaxy (MBE) on sapphire using AlN [2,3] Herein, we report on the plasma assisted MBE growth of InN films on 6H-SiC substrates using a twostep process consisting of the deposition of a thin low-temperature InN layer followed by its annealing and subsequent deposition of the epitaxial layer. We discuss the impact of the In-rich deposition conditions and of the annealing of the InN buffer on the structural, morphological, optical and electrical properties of films, which were characterized by X-ray diffraction, atomic force microscopy, spectroscopic ellipsometry (both ex-situ and in-situ), and Hall effect measurements. We show that optimisation of annealing of the low-temperature InN nucleation layer, preventing its decomposition, yields an InN nucleation layer completely wetting the SiC substrate, which results in improvement of InN epitaxial layer.

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Nucleation and growth mode of the molecular beam epitaxy of GaN on 4H–SiC exploiting real time spectroscopic ellipsometry

Cited by 13 publications

References 13 publications

Spectroscopic ellipsometry and polarimetry for materials and systems analysis at the nanometer scale: state-of-the-art, potential, and perspectives

Spectroscopic ellipsometry and polarimetry for materials and systems analysis at the nanometer scale: state-of-the-art, potential, and perspectives

Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy

Growth of InN on 6H‐SiC by plasma assisted molecular beam epitaxy

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