2002
DOI: 10.1103/physrevb.65.165202
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Nuclear spin-lattice relaxation by optically bistable defects inCdF2:In

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Cited by 5 publications
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“…The spin-lattice relaxation rate (1/T 1 ) governed by carriers (magnetic interaction) in a semiconducting material [36][37][38]48] electron probability density at a selenium nucleus [10,15]. By using the above equation, we can estimate the difference in the carrier density between the two materials.…”
Section: Resultsmentioning
confidence: 99%
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“…The spin-lattice relaxation rate (1/T 1 ) governed by carriers (magnetic interaction) in a semiconducting material [36][37][38]48] electron probability density at a selenium nucleus [10,15]. By using the above equation, we can estimate the difference in the carrier density between the two materials.…”
Section: Resultsmentioning
confidence: 99%
“…The temperature dependence of 207 Pb 1/T 1 for both materials is reported in Figure 6. In particular, Figure 6 presents semi-logarithmic plots of T 1 versus reciprocal temperature (1/T), where the red solid lines represent the thermally activated mechanism [15,48,57], where the linear least-squares fit provides the activation energies of the 14 relaxation processes for m=1 and m=2, equal to Ε=56.9 meV (or 660 K) for m=1 and 75.7 meV (or 878 K) for m=2, respectively. The magnitude of the extracted Ε for m=2 is about 1.3 times higher than that for m=1 (Figure 6).…”
Section: Resultsmentioning
confidence: 99%