Novel water insoluble (NaxAg2−x)MoO4(0 ≤ x ≤ 2) microwave dielectric ceramics with spinel structure sintered at 410 degrees

Zhou, Di; Li, Jing; Pang, Li‐Xia; Wang, Dawei; Reaney, Ian M.

doi:10.1039/c7tc01718a

Cited by 68 publications

(28 citation statements)

References 46 publications

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“…Although limited through the use of SLB (Figure 9), even the partial reaction of BMO with Ag may well limit this combination of components being used commercially. However, there are a number of low sintering temperature compounds that can be utilised within a slurry that do not react with Ag (Zhou et al 2017a(Zhou et al , 2017b(Zhou et al , 2018, thereby eliminating this problem in further iterations in the development of 3D printed RF structures using the SLB.…”

Section: Resultsmentioning

confidence: 99%

Multi-material additive manufacturing of low sintering temperature Bi₂Mo₂O₉ ceramics with Ag floating electrodes by selective laser burnout

Gheisari

Chamberlain

Chi-Tangyie

et al. 2020

Virtual and Physical Prototyping

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Additive manufacturing (AM) of co-fired low temperature ceramics offers a unique route for fabrication of novel 3D radio frequency (RF) and microwave communication components, embedded electronics and sensors. This paper describes the first-ever direct 3D printing of low temperature co-fired ceramics/floating electrode 3D structures. Slurry-based AM and selective laser burnout (SLB) were used to fabricate bulk dielectric, Bi 2 Mo 2 O 9 (BMO, sintering temperature = 620-650°C, ε r = 38) with silver (Ag) internal floating electrodes. A printable BMO slurry was developed and the SLB optimised to improve edge definition and burn out the binder without damaging the ceramic. The SLB increased the green strength needed for shape retention, produced crack-free parts and prevented Ag leaching into the ceramic during co-firing. The green parts were sintered after SLB in a conventional furnace at 645°C for 4 h and achieved 94.5% density, compressive strength of 4097 MPa, a relative permittivity (ε r) of 33.8 and a loss tangent (tan δ) of 0.0004 (8 GHz) for BMO. The feasibility of using SLB followed by a postprinting sintering step to create BMO/Ag 3D structures was thus demonstrated.

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Section: Resultsmentioning

confidence: 99%

Multi-material additive manufacturing of low sintering temperature Bi₂Mo₂O₉ ceramics with Ag floating electrodes by selective laser burnout

Gheisari

Chamberlain

Chi-Tangyie

et al. 2020

Virtual and Physical Prototyping

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“…It was well consistent with the changes in density. To the best of our knowledge, the permittivity at the microwave frequency regions is mainly determined by ionic polarizability, density, and the secondary phase . According to the XRD patterns, Rietveld refinement, and SEM analysis, the effect of secondary phase could be neglected.…”

Section: Resultsmentioning

confidence: 99%

“…To the best of our knowledge, the permittivity at the microwave frequency regions is mainly determined by ionic polarizability, density, and the secondary phase. [23][24][25] According to the XRD patterns, Rietveld refinement, and SEM analysis, the effect of secondary phase could be neglected. To investigate the influence of porosity on dielectric constant (ε r ), the following equation is used to amend the relative permittivity 4 :…”

Section: Resultsmentioning

confidence: 99%

Structure, microwave dielectric performance, and infrared reflectivity spectrum of olivine‐type Mg₂Ge_0.98O₄ ceramic

et al. 2019

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An ultra‐low dielectric loss ceramics Mg2Ge0.98O4 with olivine structure was fabricated by conventional solid‐state route. The phase composition, crystal structure, and microwave dielectric properties were investigated. The phase of Mg2Ge0.98O4 is formed to the orthorhombic forsterite structure with a space group Pmnb (62). The dense microstructure and excellent microwave dielectric properties of Mg2Ge0.98O4 ceramic were obtained at 1360°C for 4 hours, with relative density ~96.4%, εr ~ 7.3, Q × f = 112 400 GHz, and τf ~ −64.6 ppm/°C. The conductive mechanism of Mg2Ge0.98O4 in the low frequency (<1 MHz) was studied by the dielectric spectroscopy and the result with Edc = 0.93 eV demonstrates that the defect was contributed to the double ionized oxygen vacancies. The intrinsic dielectric properties of Mg2Ge0.98O4 in the microwave region were obtained by infrared reflectivity spectra with εr ~ 7.13, Q × f = 120 400 GHz. And, acceptable τf (~+2.6 ppm/°C) of 0.92Mg2Ge0.98O4–0.08CaTiO3 composite ceramic was obtained by adding the CaTiO3.

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“…where α(Ag 2+ ), α(Pb 2+ ), α(Mg 2+ ), α(Zn 2+ ), α(V 5+ ) and α(O 2− ) are 2.25, 6.58, 1.33, 2.09, 2.92, and 2.01 respectively. 29,50 It was found that, in the case of APMVO, α theo is about 50.93, while that of APZVO is about 52.47. The corresponding theoretical permittivity of single-phase compounds can be calculated using the Clausius-Mossotti equation as follows:…”

Section: Structural Characteristics and Microwave Dielectric Propermentioning

confidence: 97%

Crystal structure, phonon modes, and bond characteristics of AgPb₂B₂V₃O₁₂ (B = Mg, Zn) microwave ceramics

Madhuri

Subodh

2020

J Am Ceram Soc

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AgPb2B2V3O12 (B = Mg, Zn) ceramics with low sintering temperature were synthesized via the conventional solid‐state reaction route. Rietveld refinements of the X‐ray diffraction patterns confirm cubic symmetry with space group Ia3¯d. The number of observed vibrational modes and those predicted by group theoretical calculations also confirm the Ia3¯d space group. At the optimum sintering temperature of 750°C/4 hours, AgPb2Mg2V3O12 has a relative permittivity of 23.3 ± 0.2, unloaded quality factor (Qnormalu×f) of 26 900 ± 500 GHz (f=7.57GHz), and temperature coefficient of resonant frequency of 19.3 ± 1 ppm/°C, while AgPb2Zn2V3O12 has the corresponding values of 26.4 ± 0.2, 28 400 ± 500 GHz (f=7.21GHz) and –18.4 ± 1 ppm/°C at 590°C/4 hours. Microwave dielectric properties of a few reported garnets and Pb2AgB2V3O12 (B = Mg, Zn) ceramics were correlated with their intrinsic characteristics such as the Raman shifts as well as width of A1g Raman bands. Higher quality factor was obtained for lower full width at half‐maxima (FWHMs) values of A1g modes. The increase in B‐site bond valence contributes to high Qnormalu×f and low |τf| with the substitution of Zn2+ by Mg2+. Furthermore, the high ionic polarizability and unit cell volume with Zn2+substitution contribute to increased relative permittivity.

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Novel water insoluble (Na_xAg_2−x)MoO₄(0 ≤ x ≤ 2) microwave dielectric ceramics with spinel structure sintered at 410 degrees

Cited by 68 publications

References 46 publications

Multi-material additive manufacturing of low sintering temperature Bi₂Mo₂O₉ ceramics with Ag floating electrodes by selective laser burnout

Multi-material additive manufacturing of low sintering temperature Bi₂Mo₂O₉ ceramics with Ag floating electrodes by selective laser burnout

Structure, microwave dielectric performance, and infrared reflectivity spectrum of olivine‐type Mg₂Ge_0.98O₄ ceramic

Crystal structure, phonon modes, and bond characteristics of AgPb₂B₂V₃O₁₂ (B = Mg, Zn) microwave ceramics

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Novel water insoluble (NaxAg2−x)MoO4(0 ≤ x ≤ 2) microwave dielectric ceramics with spinel structure sintered at 410 degrees

Cited by 68 publications

References 46 publications

Multi-material additive manufacturing of low sintering temperature Bi2Mo2O9 ceramics with Ag floating electrodes by selective laser burnout

Multi-material additive manufacturing of low sintering temperature Bi2Mo2O9 ceramics with Ag floating electrodes by selective laser burnout

Structure, microwave dielectric performance, and infrared reflectivity spectrum of olivine‐type Mg2Ge0.98O4 ceramic

Crystal structure, phonon modes, and bond characteristics of AgPb2B2V3O12 (B = Mg, Zn) microwave ceramics

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Product

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Novel water insoluble (Na_xAg_2−x)MoO₄(0 ≤ x ≤ 2) microwave dielectric ceramics with spinel structure sintered at 410 degrees

Multi-material additive manufacturing of low sintering temperature Bi₂Mo₂O₉ ceramics with Ag floating electrodes by selective laser burnout

Multi-material additive manufacturing of low sintering temperature Bi₂Mo₂O₉ ceramics with Ag floating electrodes by selective laser burnout

Structure, microwave dielectric performance, and infrared reflectivity spectrum of olivine‐type Mg₂Ge_0.98O₄ ceramic

Crystal structure, phonon modes, and bond characteristics of AgPb₂B₂V₃O₁₂ (B = Mg, Zn) microwave ceramics