2018
DOI: 10.1039/c8ta02494d
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Novel two-dimensional semiconductor SnP3: high stability, tunable bandgaps and high carrier mobility explored using first-principles calculations

Abstract: A novel semiconducting 2D material based on monolayer and bilayer SnP3 is proposed using first-principles calculations.

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Cited by 160 publications
(136 citation statements)
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“…Electrostatic potential indicates the minimum energy that electron must absorb when it escapes from a material, which shows relationship with chemical stability [18,[20][21][22]. Figure 3 Water splitting is a clean and effective way of oxygen and hydrogen production.…”
Section: Structure and Stabilitymentioning
confidence: 99%
“…Electrostatic potential indicates the minimum energy that electron must absorb when it escapes from a material, which shows relationship with chemical stability [18,[20][21][22]. Figure 3 Water splitting is a clean and effective way of oxygen and hydrogen production.…”
Section: Structure and Stabilitymentioning
confidence: 99%
“…Their monolayer structures are closely related to that of arsenic, which can be viewed as replacement of every fourth atom in the arsenic layer by a (Ge, or Sn, In) atom and of the rest by phosphorus (P) atom. Examples in this class of 2D materials include combination of phosphorus with group-II, III, and IV elements, which result in easily exfoliable 2D materials with low cleavage energies for monolayer, such as calcium triphosphide (CaP 3 ), 20 indium triphosphide (InP 3 ), 21 tin triphosphide (SnP 3 ), 22 and germanium triphosphide (GeP 3 ). 23 In particular, monolayer GeP 3 23 was theoretically predicted to be a novel 2D structure with tunable indirect bandgaps, high carrier mobilities, and an excellent absorption coefficient in the range of solar spectrum, and it can be easily exfoliated from GeP 3 bulk material.…”
Section: Introductionmentioning
confidence: 99%
“…Liu and co-workers 25 theoretically predicted the SnP 3 monolayer with an ultralow energy barrier (0.03 eV) for Na diffusion. However, the reported band gaps of GeP 3 (0.55 eV), 23 SnP 3 (0.72 eV), 22,26 and InP 3 (1.14 eV) 21 monolayers are relatively narrow so that they are unsuitable for photocatalysis.…”
Section: Introductionmentioning
confidence: 99%
“…Theoretical investigations using ab initio methods predicted a buckled structure of free‐standing silicene as opposed to the planar hexagonal construction for graphene . Recently, density functional theory (DFT) based calculations have also established a buckled structure of silicene and predicted the semimetal or zero‐gap semiconductor characteristics similar to graphene . The instability of silicene in the high symmetric planar arrangement is averted in its buckled structure .…”
Section: Introductionmentioning
confidence: 99%