Novel TiO2-based memristors FET with programmable SET/RESET for neuromorphic computing

Panda, Debashis; Patnaik, Asutosh

doi:10.1016/j.matpr.2023.06.024

Cited by 2 publications

(1 citation statement)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Improving materials for resistive switching devices and field-effect transistors based on ferroelectrics is closely related to optimizing the surfaces of these materials [1][2][3][4][5]. There is growing interest in combining these elements as field-effect transistors based on TiO 2 memristors with a programmable set/reset for neuromorphic computing [6]. Adding functionality to control the characteristics of memristive structures is a promising strategy for improving such devices.…”

Section: Introductionmentioning

confidence: 99%

Surface Functionalization of TiO2 Nanotubes Modified with a Thin Film of BiFeO3

Ramazanov,

Orudzhev,

Gajiev

2023

Surfaces

View full text Add to dashboard Cite

The atomic layer deposition method allows for the production of a thin film with a high aspect ratio on the uneven surface of titanium dioxide nanotubes TiO2(Nt). A modified BiFeO3/TiO2(Nt)/Ti (BFOT) structure with controllable electrical characteristics was obtained. BFOT possesses both ferroelectric and semiconductor properties with nonlinear conductivity dependent on the magnitude and duration of the voltage supply. Analysis of the temperature dependence of charge variation showed leakage currents in the BFOT structure due to the capture and release of charge carriers from defect levels. Surface modification of nanotubes with the multiferroic BiFeO3 allows for the creation of semiconductors with adaptive functional properties.

show abstract

Section: Introductionmentioning

confidence: 99%

Surface Functionalization of TiO2 Nanotubes Modified with a Thin Film of BiFeO3

Ramazanov,

Orudzhev,

Gajiev

2023

Surfaces

View full text Add to dashboard Cite

show abstract

Synaptic plasticity in zinc oxide-based flexible invisible transparent memristor by modulating oxygen concentration

Patnaik,

Acharya,

Tiwari

et al. 2024

Journal of Applied Physics

View full text Add to dashboard Cite

Artificial synapses based on memristors are used in emulating the synaptic plasticity behavior of a human brain. Here, we have proposed a transparent memristor based on aluminum zinc oxide (AZO) on a flexible substrate—polyethylene naphthalate. We have analyzed the elemental composition of the gadget subjected to the optimized flow rate of Ar/O2 = 2/1 by x-ray photoelectron spectroscopy. The prepared AZO/ZnO/indium-doped tin oxide memristor exhibits a bipolar switching behavior with Vset/Vreset of 1.4/−2.0 V. The results reflect an acceptable endurance of >500 cycles and retention of 104 s. The optimized device shows an improvement in the non-linearity of potentiation—2.31/depression—3.05 and has more than 25 cycles of stability. The transparency is checked using a UV-visible spectrophotometer showing 90% transparency in the visible region making the device suitable for applications in invisible electronics. Our results reflect that the proposed device can be used as a transparent electrode in making artificial synapses for neuromorphic applications.

show abstract

Novel TiO2-based memristors FET with programmable SET/RESET for neuromorphic computing

Cited by 2 publications

References 25 publications

Surface Functionalization of TiO2 Nanotubes Modified with a Thin Film of BiFeO3

Surface Functionalization of TiO2 Nanotubes Modified with a Thin Film of BiFeO3

Synaptic plasticity in zinc oxide-based flexible invisible transparent memristor by modulating oxygen concentration

Contact Info

Product

Resources

About