Novel Three-Phase Two-Third-Modulated Buck-Boost Current Source Inverter System Employing Dual-Gate Monolithic Bidirectional GaN e-FETs

Guacci, Mattia; Tatic, Mina; Bortis, Dominik; Kolar, Johann W.; Kinoshita, Yusuke; Ishida, Hideyuki

doi:10.1109/pedg.2019.8807580

Cited by 29 publications

(7 citation statements)

References 21 publications

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“…In this paper, the operating principle of the 3-Φ bB CSI system is introduced in Section II. Ideal waveforms of the 3-Φ inverter support the explanation of a variable DC-link current control strategy denominated two-third pulse-width modulation (2/3-PWM) [28]- [31]. Although the basic principle of 2/3-PWM is originally presented in [29], [30], this is as well briefly summarized in Section III to provide a common basis for the subsequent analysis, which focuses on its range of applicability, resulting stress on the circuit components, e.g., switching losses, and operation supported by comprehensive simulation results (also in case of non-unity load power factor and load steps).…”

Section: Introductionmentioning

confidence: 91%

“…Two different modulation schemes, namely conventional pulse-width modulation (3/3-PWM) and two-third pulse-width modulation (2/3-PWM) [28]- [31] can be applied to the 3-Φ bB CSI system when operated in the buck-mode. Both approaches are described in this section with the support of idealized waveforms of the 3-Φ inverter, relative to its nominal operating point (see Table I).…”

Section: Modulation Schemesmentioning

confidence: 99%

“…It can be observed that 2/3-PWM clearly outperforms 3/3-PWM, as already speculated, especially for low values of φ, i.e., in approximately ohmic load conditions. This originates from the fact that 2/3-PWM requires only one hard switching transition per switching period and, in addition, that the switched voltage |v bc | is the smallest among all |v xy | for low values of φ [31]. In particular.…”

Section: B Reduction Of Switching Lossesmentioning

confidence: 99%

“…The discrepancy between calculations and simulations is attributed to the averaging of v xy over the considered π/3-wide interval of an AC output period and to the neglection of the soft switching losses, as well as of the losses occurring in the switch not involved in the commutation of i dc [41]. A more detailed (but more complex) analytic derivation of E sw , offering a better matching with the numerical results, can be found in [31].…”

Section: B Reduction Of Switching Lossesmentioning

confidence: 99%

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Three-Phase Two-Third-PWM Buck-Boost Current Source Inverter System Employing Dual-Gate Monolithic Bidirectional GaN e-FETs

Guacci¹,

Zhang²,

Tatic³

et al. 2019

CPSS TPEA

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Latest dual-gate (2G) monolithic bidirectional (MB) gallium nitride (GaN) enhancement-mode field effect transistors (e-FETs) enable a performance breakthrough of current DC-link inverters, e.g., in terms of power conversion efficiency, power density, cost and complexity. In fact, a single 2G MB GaN e-FET can replace the two anti-series connected conventional power semiconductors required in this inverter topology, realizing a four-quadrant (AC) switch with bidirectional voltage blocking capability and allowing controlled bidirectional current flow. Furthermore, as shown in this paper in case of three-phase (3-Φ) buck-boost (bB) current source inverter (CSI) systems comprising a DC-link current impressing buck-type DC/DC input stage and a subsequent boost-type 3-Φ current DC-link inverter output stage, a variable DC-link current control strategy, based on aSynergetic Control concept, can be applied to significantly reduce the switching losses occurring in the 3-Φ inverter. This strategy is denominated two-third pulse-width modulation (2/3-PWM), since by properly shaping the DC-link current with the input stage, the desired 3-Φ sinusoidal load phase currents can be generated by switching, in each switching period, only two out of the three phases of the output stage. Based on comprehensive circuit simulations and analytical calculations, a detailed explanation of the developed modulation and control schemes in different operating conditions is provided, and the reduction of losses enabled by 2/3-PWM is confirmed. Next, the seamless transition of the 3-Φ bB CSI system from 2/3-PWM to conventional 3/3-PWM is demonstrated. Finally, a 3.3 kW 3-Φ bB CSI system, applying 2/3-PWM and employing research samples of 2G MB GaN e-FETs in the 3-Φ inverter, is estimated to achieve an efficiency of 98.4% and a power density of 18 kW/dm 3 (295 W/in 3 ) at a switching frequency of 140 kHz. Index Terms-Dual-gate (2G) monolithic bidirectional (MB) gallium nitride enhancement-mode field-effect transistors (e-FETS), three-phase buck-boost current source inverter system, variable DC-link current control. in 2001, all inElectronic Engineering. In 1991, he joined Panasonic Corporation, Osaka, Japan, where he was engaged in the research and development of GaAs HFETs, HBTs, and GaAs MMICs. Since 2003, is involved in the research on GaN-based semiconductor devices. He authored or coauthored more than 60 technical papers in international journals and conference proceedings. He submitted more than 60 patents on semiconductor devices and on their process technologies. His current interest is on GaN-based bidirectional switches and on their applications.

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Section: Introductionmentioning

confidence: 91%

Section: Modulation Schemesmentioning

confidence: 99%

Section: B Reduction Of Switching Lossesmentioning

confidence: 99%

Section: B Reduction Of Switching Lossesmentioning

confidence: 99%

See 2 more Smart Citations

Three-Phase Two-Third-PWM Buck-Boost Current Source Inverter System Employing Dual-Gate Monolithic Bidirectional GaN e-FETs

Guacci¹,

Zhang²,

Tatic³

et al. 2019

CPSS TPEA

Self Cite

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show abstract

“…The proposed protection scheme consists of two parts: one is used to protect the device from short-circuit and overcurrent events, namely the desaturation scheme; another one is aimed to protect the negative voltage fail, so-called negative power supply FIGURE 2 The implementation of the protection circuit for GaN-based bidirectional switching (BDS) module FIGURE 3 The schematic of three-phase buck-boost current source inverter (CSI) systems [23] protection scheme. This negative power supply is used to provide negative voltage for both the desaturation circuit and the gate drive circuit.…”

Section: Protection Scheme For Normally-on Wbg Devicesmentioning

confidence: 99%

An ultra‐fast protection scheme for normally‐on wide bandgap devices

Tan

Narayanankutty

Narayanan

2021

IET Power Electronics

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Here, an ultra‐fast protection scheme that is dedicated to depletion‐mode (d‐mode) devices is proposed. The key to the d‐mode device gate drive design is the negative supply and overcurrent protection, due to the safety concern for d‐mode devices when a failure happens in power conversion applications. This work evaluates specific requirement of d‐mode devices, such as the isolated negative power supply and short‐circuit protection. Normally‐on d‐mode GaN devices have lower on‐resistance and minimal dead time in comparison with enhancement‐mode (e‐mode) GaN devices, which can further reduce the switching loss and conduction loss. Both simulation and experimental verification are conducted in this work to evaluate the performance of the proposed protection scheme. The proposed desaturation scheme can wipe out the overcurrent event within 341 ns. Furthermore, the proposed negative power supply scheme can sustain its output for 60.5 ms, providing sufficient action time for the control unit to isolate the converter.

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High-temperature integrated SiC MOSFET bi-directional switch in power-overlay technology

Lee,

Castellazzi

2023

Microelectronics Reliability

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Novel Three-Phase Two-Third-Modulated Buck-Boost Current Source Inverter System Employing Dual-Gate Monolithic Bidirectional GaN e-FETs

Cited by 29 publications

References 21 publications

Three-Phase Two-Third-PWM Buck-Boost Current Source Inverter System Employing Dual-Gate Monolithic Bidirectional GaN e-FETs

Three-Phase Two-Third-PWM Buck-Boost Current Source Inverter System Employing Dual-Gate Monolithic Bidirectional GaN e-FETs

An ultra‐fast protection scheme for normally‐on wide bandgap devices

High-temperature integrated SiC MOSFET bi-directional switch in power-overlay technology

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