Novel Ternary Nitride Thin Film‐Based Self‐Powered, Broad Spectral Responsive Photodetector with a High Detectivity for Weak Light

Abstract

with titanium nitride (TiN) as the most common example. [1] Along with their superior mechanical properties, these are good conductors being employed as permanent contact layers and diffusion barriers in microelectronics. [1] In addition, nitrides are well explored as novel piezoelectric and thermoelectric materials, generally in the area of energy harvesting (e.g., aluminium nitride (AlN)). AlN has been well studied in the past 20 years due to its excellent properties, such as wide bandgap, high thermal conductivity, high hardness, and high thermal stability. Its thin film has a high piezoelectric coefficient (d 33 = 5.5 pCN -1 ). [2] There is a plethora of literature available on transition metal nitride in both thin-film and bulk forms for various applications. [1] Among nitrides, the ternary transition metal nitrides (TTMNs), particularly II-IV-N 2, have emerged as a recent attraction in the electronic industry due to their attractive structural and electrical properties and, importantly, the ability to offer tunable properties such as bandgap, etc. [1] The small amount of scandium (Sc)-doping into AlN significantly increased the piezoelectric properties. [2] The most explored prototypes in this category Self-powered, wide-spectral response, fast, and high-sensitivity photo detectors are essential for developing next-generation optoelectronic devices. In this work, the predicted optoelectronic properties of the ternary metal-zinc (Zn)nitride (N) thin films are experimentally demonstrated. A novel phase of the Titanium (Ti)-Zn-N system (dominantly TiZnN 2 film of ≈235 nm thickness) is developed on the p-Si substrate, which shows excellent optoelectronic properties. The Indium Tin Oxide (ITO)/TiZnN 2 /p-type Si (p-Si) photodetector of area ≈4 mm 2 exhibits an impressive responsivity of 1.22 × 10 -4 A W −1 at 0 V and 40 mA W −1 at −4 V, a specific detectivity up to 1.16 × 10 9 Jones at 0 V, and a response speed of 1.9 ms at zero external bias (i.e., self-powered mode). Benefiting from the broad-band absorption of the film and p-Si combination, the detection range is observed from the ultraviolet to near-infrared (300-1150 nm). Simultaneous operation of self-powered photo-triggered drip irrigation ON and street light OFF in the early morning and vice-versa in the evening is demonstrated for autonomous farming. The device is insensitive to humidity and ambiance, and generates a photocurrent with light intensity as low as 5 mW cm −2 . The active layer is hydrophobic and highly stable, and the fabrication is cost-effective.

Prediction and Characterization of Two-Dimensional Zn2VN3

“…For example, the thickness of the Mo-incorporated Cu 2 ZnSnS 4 absorber layer increased with Mo cosputtering power, as shown in the cross-section scanning transmission electron microscope study . More recently, the ternary metal–zinc–nitride thin films of about 235 nm thickness were demonstrated experimentally and implemented in a photodetector device . Proper choice of a substrate is an important step for production of 2D Zn 2 VN 3 .…”

“…25 More recently, the ternary metal−zinc−nitride thin films of about 235 nm thickness were demonstrated experimentally and implemented in a photodetector device. 26 Proper choice of a substrate is an important step for production of 2D Zn 2 VN 3 . For instance, bulk Zn 2 VN 3 deposited on glass and sapphire substrates appears to be phase-pure, while the epitaxial stabilization on Al 2 O 3 (0001) increases its crystallinity and texture.…”

Unprecedented Multifunctionality in Novel Monophase Micro/Nanostructured Ti‐Zn Alloy

“…In contrast, the CPD Au and CPD sample are the contact potential differences between the gold tip and the gold reference surface and between the gold tip and the sample, respectively. [40,81] The hemolysis assay was performed to investigate the influence of single-phase Ti 0.5 Zn 0.5 compound on human cells and their ability to induce cytotoxicity. For hemolysis assay, the blood samples were acquired intravenously from a healthy male donor containing normal counts of RBC cells into ethylenediamine tetraacetic acid vials (SRM Medical College Hospital and Research Centre, Chengalpattu, Tamil Nadu, India).…”

Prediction of Zn2(V, Nb, Ta)N3 Monolayers for Optoelectronic Applications

“…26 A ITO/TiZnN 2 /Si photodetector has been developed generating a photocurrent with a low light intensity and insensitive to humidity. 27 It has also been shown that Zn 2 V (1−x) Nb x N 3 alloys possess comparably small bowing parameter that is beneficial for materials used in light-emitting diodes. 28 Another important question regarding the performance of tandem solar cells is related to the environmental stability of the top layer based on ternary nitrides.…”

“…A ZnSnN 2 thin film has been utilized as an absorbing material is solar cells, with the ZnSnN 2 / p -CuCrO 2 solar cell exhibiting an efficiency exceeding 22% . A ITO/TiZnN 2 /Si photodetector has been developed generating a photocurrent with a low light intensity and insensitive to humidity . It has also been shown that Zn 2 V (1– x ) Nb x N 3 alloys possess comparably small bowing parameter that is beneficial for materials used in light-emitting diodes …”