Novel ternary layered manganese bismuth tellurides of the MnTe-Bi2Te3 system: Synthesis and crystal structure

Aliev, Ziya S.; Амирасланов, И. Р.; Nasonova, Daria I.; Shevelkov, Аndrei V.; Abdullayev, N. A.; Jahangirli, Z. A.; Orujlu, Elnur N.; Otrokov, M. M.; Mamedov, Nazim; Бабанлы, М. Б.; Chulkov, Evgueni V.

doi:10.1016/j.jallcom.2019.03.030

Cited by 177 publications

(150 citation statements)

References 34 publications

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“…This is further confirmed by the x-ray powder diffraction measurements performed on crystals gently ground with fine silicon powder. Our x-ray diffraction measurements do not suggest any ordering of Bi and Sb in the doped compositions or the formation of other MnB 2n Te 3n+1 (B=Bi or Sb or mixture) phases with n > 1 [22]. Reitveld refinement suggests 3-5%wt of Bi 2−x Sb x Te 3 in the ground crystal, which likely comes from the residual flux on the crystal surface.…”

Section: A Structural Propertiesmentioning

confidence: 63%

Evolution of structural, magnetic, and transport properties in MnBi2−xSbxTe4

et al. 2019

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Here we report the evolution of structural, magnetic, and transport properties in MnBi2−xSbxTe4(0≤x≤2) single crystals. MnSb2Te4, isostructural to MnBi2Te4, is successfully synthesized in single-crystal form. Magnetic measurements suggest an antiferromagnetic order below TN=19K for MnSb2Te4 with the magnetic moments aligned along the crystallographic c axis. With increasing Sb content in MnBi2−xSbxTe4, the a-lattice parameter decreases linearly following Vegard's law, while the c-lattice parameter shows little compositional dependence. The contraction along a is caused by the reduction of the Mn-Te-Mn bond angle, while the Mn-Te bond length remains nearly constant. The antiferromagnetic ordering temperature slightly decreases from 24 K for MnBi2Te4 to 19 K for MnSb2Te4. More dramatic change was observed for the critical magnetic fields required for the spin-flop transition and the moment saturation. Both critical fields decrease with increasing Sb content for x≤1.72; a spin-flip transition occurs in MnSb2Te4 at a small field of 3 kOe applied along the c axis. In high magnetic fields, the saturation moment at 2 K shows significant suppression from 3.56μB/Mn for MnBi2Te4 to 1.57μB/Mn for MnSb2Te4. Analysis of the magnetization data suggests that both the interlayer magnetic interaction and single-ion anisotropy decrease with increasing Sb content for x≤1.72. The partial substitution of Bi by Sb also dramatically affects the transport properties. A crossover from n-type to p-type conducting behavior is observed around x≈0.63. Our results show close correlation between structural, magnetic, and transport properties in MnBi2−xSbxTe4 and that partial substitution of Bi by Sb is an effective approach to fine tuning both the magnetism and transport properties of MnBi2−xSbxTe4.

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Section: A Structural Propertiesmentioning

confidence: 63%

Evolution of structural, magnetic, and transport properties in MnBi2−xSbxTe4

et al. 2019

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“…More importantly, quantized anomalous Hall plateaus had been discovered in few-layer MnBi 2 Te 4 films at a record-high temperature of 4.5 K, albeit requiring a high field (~ 10 Tesla) to force the AFM ground state into a FM one [26,27], while certain thin films taken from MnBi 4 Te 7 is predicted to realize QAHE at a much lower magnetic field [30]. One basic magnetic building block of MnBi 2 Te 4 consists of one layer of MnTe sandwiched by one layer of Bi 2 Te 3 [12][13][14]16], forming a septuple layer (SL) [ Fig. 1(a)].…”

Section: Introduction -The Realization Of Magnetic Topological Insulamentioning

confidence: 99%

Gapless Surface Dirac Cone in Antiferromagnetic Topological Insulator MnBi2Te4

et al. 2019

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The recent discovered antiferromagnetic topological insulators in Mn-Bi-Te family with intrinsic magnetic ordering have rapidly drawn broad interest since its cleaved surface state is believed to be gapped, hosting the unprecedented axion states with half-integer quantum Hall effect. Here, however, we show unambiguously by using high-resolution angle-resolved photoemission spectroscopy that a gapless Dirac cone at the (0001) surface of MnBi2Te4 exists between the bulk band gap. Such unexpected surface state remains unchanged across the bulk Né el temperature, and is even robust against severe surface degradation, indicating additional topological protection. Through symmetry analysis and ab-initio calculations we consider different types of surface reconstruction of the magnetic moments as possible origins giving rise to such linear dispersion. Our results reveal that the intrinsic magnetic topological insulator hosts a rich platform to realize various topological phases such

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“…In the newly discovered magnetic topological insulator MnBi2Te4 [1][2][3][4][5][6][7][8], both axion insulator state and quantized anomalous Hall effect (QAHE) have been observed by tuning the magnetic structure [9][10][11]. The related (MnBi2Te4)m(Bi2Te3)n heterostructures with increased tuning knobs, are predicted to be a more versatile platform for exotic topological states [12][13][14][15][16]. Here, we report angle-resolved photoemission spectroscopy (ARPES) studies on a series of the heterostructures (MnBi2Te4, MnBi4Te7 and MnBi6Te10).…”

mentioning

confidence: 99%

Universal gapless Dirac cone and tunable topological states in (MnBi2Te4)m(

Shi

et al. 2020

Phys. Rev. B

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Novel ternary layered manganese bismuth tellurides of the MnTe-Bi2Te3 system: Synthesis and crystal structure

Cited by 177 publications

References 34 publications

Evolution of structural, magnetic, and transport properties in MnBi2−xSbxTe4

Evolution of structural, magnetic, and transport properties in MnBi2−xSbxTe4

Gapless Surface Dirac Cone in Antiferromagnetic Topological Insulator MnBi2Te4

Universal gapless Dirac cone and tunable topological states in (MnBi2Te4)m(

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