Novel temperature calibration for epitaxial growth characterization

Abstract

A multi-probe in situ temperature monitoring system with a closed-loop process control has been developed using the technique of emissivity-compensated pyrometry for semiconductor epitaxial growth via metal-organic chemical vapor deposition. A standalone temperature calibration unit was designed to correct for reactor-to-reactor temperature variations. After calibration, a probe-to-probe temperature mismatch of less than ± 0.13 °C was obtained. Moreover, a temperature offset induced by the inevitable viewport deposition over time was demonstrated. A 4.28 °C temperature bias was successfully double-calibrated by introducing a compensation factor into the radiation equations, which was then validated during twelve processing runs of light emitting diode epitaxial growth.