Abstract:Self-heating effects in Silicon-OnInsulator (SOI) power devices have become a serious problem when the active silicon layer thickness is reduced and buried oxide thickness is increased. In order to alleviate the self-heating, two novel techniques which lead to a better heat flow from active silicon layer to silicon substrate through the buried oxide layer in SO1 power devices are proposed No significant changes on device electrical characteristics are expected with the inclusion of the novel techniques. The el… Show more
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