Novel Surface Passivation Technique for Low-Temperature Solution-Processed Perovskite PV Cells

Abstract

Low-temperature solution-processed perovskite solar cells are attracting immense interest due to their ease of fabrication and potential for mass production on flexible substrates. However, the unfavorable surface properties of planar substrates often lead to large variations in perovskite crystal size and weak charge extractions at interfaces, resulting in inferior performance. Here, we report the improved performance, reproducibility, and high stability of "p-i-n" planar heterojunction perovskite solar cells. The key fabrication process is the addition of the amine-polymer poly[(9,9-bis(3'-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN-P1) to a simple spin-coating process. The PFN-P1 works as a surfactant and helps promote uniform crystallization. As a result, perovskite films with PFN-P1 have a uniform distribution of grain sizes and improved open circuit voltage. Devices with PFN-P1 showed the best efficiency (13.2%), with a small standard deviation (0.40), out of 60 cells. Moreover, ∼90% of the initial efficiency was retained over more than 6 months. Additionally, devices fabricated from PFN-P1 mixed perovskite films showed higher stability under continuous operation at maximum power point over 150 h. Our results show that this approach is simple and effective for improving device performance, reproducibility, and stability by modifying perovskite properties with PFN-P1. Because of the simplicity of the fabrication process and reliable performance increase, this approach marks important progress in low-temperature solution-processed perovskite solar cells.

Carrier Interfacial Engineering by Bismuth Modification for Efficient and Thermoresistant Perovskite Solar Cells

“…It is obvious that MB 1.5 modified device exhibits a higher V oc than the control device under different light intensities (Figure 2e). [48,49] Furthermore, the dark current density of MB 1.5 modified device is shown in Figure 2f. [46] The slope values of 1.52 k B T/e and 1.29 k B T/e are obtained for the control and MB 1.5 modified devices, respectively.…”

Effect of Carrier Transport in NiO on the Photovoltaic Properties of Lead Iodide Perovskite Solar Cells

“…After cleaning the surface of the NiO x layer, the perovskite and PCBM layers were prepared and deposited as reported. 14,17,18 After Ag deposition, the devices were sealed by a glass plate. The current density-voltage (J-V ) characteristics was measured by a solar simulator system (Asahi Spectra Co. Ltd., California, USA).…”

“…1,2 Planar type perovskite solar cells have been developed to circumvent the complicated analysis of perovskite semiconductor in mesoporous structure, and to produce the perovskite solar cells via lower temperature processes. [7][8][9][10][11][12][13][14][15][16][17][18] We have demonstrated that the solar cells consisting of Tin-doped indium oxide (ITO)/Poly (3,4-ethylenedioxythiophene): Poly(styrenesulfonate) (PEDOT:PSS)/Perovskite/Phenyl-C61-Butyric-Acid-Methyl Ester (PCBM)/Ag ( Fig. 1) have the ideal diode properties and high reproducibility.…”

“…1) have the ideal diode properties and high reproducibility. [14][15][16][17][18] From the Mott-Schottky plot, the perovskite solar cells can be considered as pin structure, consisting of p-type/ intrinsic/n-type semiconductors. 15 Recently, several hole transport materials (HTM) have also been introduced into the perovskite solar cells in place of PEDOT:PSS to obtain probable device application or efficient devices.…”

Long‐Lasting Nanophosphors Applied to UV‐Resistant and Energy Storage Perovskite Solar Cells

“…More importantly, the device with SAED exhibits a larger R reb (264.8 Ω cm 2 ) than that of the control device (219.2 Ω cm 2 ) measured under dark conditions. [37][38][39] It should be highlighted that SAED film thickness is critical to PSC device performance. [32] Similar results were also obtained for 0 bias tests.…”