Novel Sn-based photoresist for high aspect ratio patterning

Li, Mengjun; Manichev, Viacheslav; Yu, Fangzhou; Hutchison, Danielle C.; Nyman, May; Gustafsson, T.; Feldman, L. C.; Garfunkel, Eric

doi:10.1117/12.2297440

Cited by 7 publications

(11 citation statements)

References 12 publications

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“…Survey mass spectra were obtained below and at the β-NaSn 13 decomposition temperatures. The mass spectra were a good match to spectra in the NIST data base for electron-impact ionization of 1-butene and butane, where the main mass-to-charge ratios (m/z) were at 15,26,27,28,29,39,41,42,43,55,56, 57, and 58. 21 In Figure 1, we show TPD spectra from the β-NaSn 13 film for several desorption species with m/z = 18 (gray), 28 (blue), 41 (red), 44 (purple), and 56 (black).…”

Section: ■ Results and Discussionmentioning

confidence: 63%

“…Recently, a β-NaSn 13 photoresist has been patterned using He ion beam lithography. 15 The underlying Si was etched with an O 2 /SF 6 plasma resulting in high aspect ratio (15:1) and dense line patterns (20 nm half pitch) with no defects. Exposing a β-NaSn 13 photoresist with Al Kα radiation (hν = 1486.6 eV) indicates that these resists are negative tone.…”

Section: ■ Introductionmentioning

confidence: 99%

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Effect of Oxygen on Thermal and Radiation-Induced Chemistries in a Model Organotin Photoresist

Frederick

Diulus

Hutchison

et al. 2019

ACS Appl. Mater. Interfaces

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Organotin photoresists have shown promise for next-generation lithography because of their high extreme ultraviolet (EUV) absorption cross sections, their radiation sensitive chemistries, and their ability to enable highresolution patterning. To better understand both temperatureand radiation-induced reaction mechanisms, we have studied a model EUV photoresist, which consists of a charge-neutral butyl−tin cluster. Temperature-programmed desorption (TPD) showed very little outgassing of the butyl−tin resist in ultrahigh vacuum and excellent thermal stability of the butyl groups. TPD results indicated that decomposition of the butyl−tin resist was first order with a fairly constant decomposition energy between 2.4 and 3.0 eV, which was determined by butyl group desorption. Electron-stimulated desorption (ESD) showed that butyl groups were the primary decomposition product for electron kinetic energies expected during EUV exposures. X-ray photoelectron spectroscopy was performed before and after low-energy electron exposure to evaluate the compositional and chemical changes in the butyl−tin resists after interaction with radiation. The effect of molecular oxygen during ESD experiments was evaluated, and it was found to enhance butyl group desorption during exposure and resulted in a significant increase in the ESD cross section by over 20%. These results provide mechanistic information that can be applied to organotin EUV photoresists, where a significant increase in photoresist sensitivity may be obtained by varying the ambient conditions during EUV exposures.

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Section: ■ Results and Discussionmentioning

confidence: 63%

Section: ■ Introductionmentioning

confidence: 99%

Effect of Oxygen on Thermal and Radiation-Induced Chemistries in a Model Organotin Photoresist

Frederick

Diulus

Hutchison

et al. 2019

ACS Appl. Mater. Interfaces

Self Cite

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“…A number of measurements have been made of the dose required to achieve HIBL full exposure of EBL-standard HSQ and PMMA resists, consistently finding that compared with electrons, one to two orders of magnitude lower doses of helium ions are required [114][115][116]. The high sensitivity to helium ions of the inorganic HafSOx resist (designed for EUV lithography) has been explored [117] and the unique potential to use HIBL to pre-screen EUV resists has been evaluated [118][119][120]. The advantages of HIBL have also been highlighted using a number of other novel resists, including a fullerene-based molecular resist [121], a tetracene molecular resist [122], and various organic-inorganic resists [123][124][125][126][127][128][129].…”

Section: Sub-10 Nm Patterningmentioning

confidence: 99%

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

Allen¹

2021

Beilstein J. Nanotechnol.

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The helium ion microscope has emerged as a multifaceted instrument enabling a broad range of applications beyond imaging in which the finely focused helium ion beam is used for a variety of defect engineering, ion implantation, and nanofabrication tasks. Operation of the ion source with neon has extended the reach of this technology even further. This paper reviews the materials modification research that has been enabled by the helium ion microscope since its commercialization in 2007, ranging from fundamental studies of beam–sample effects, to the prototyping of new devices with features in the sub-10 nm domain.

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“…The development of metal-based resist materials (hereafter referred to as "metal resists") has received considerable research attention [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] due to their various perceived advantages for nextgeneration high-volume manufacturing using extreme ultraviolet lithography (EUVL) [19][20][21][22][23]. Metal resists possess high etching resistance, allowing EUVL application even at thin films.…”

Section: Introductionmentioning

confidence: 99%

“…However, it is apparent that such patterning capabilities come at the expense of low resist sensitivity [5,6,24]. Moreover, recent reports suggest the occurrence of metal resist film instability (at a certain time) after being coated/baked as a film on a substrate (post coating delay or PCD) [1,[6][7][8][10][11][12][13][14][15][16]24]. Such issues show that significant research work remains to further improve these types of materials.…”

Section: Introductionmentioning

confidence: 99%

Characterization Studies on Metal-based EUV Resist Film Properties

Santillan

Itani

2018

J. Photopol. Sci. Technol.

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Investigations on the resist film depth-profile of a Zr-based EUV metal resist (which contains methacrylic acid or MAA as shell) reveal that the metal cores (Zr) are homogeneously distributed across the film-depth. However, the shell molecules (MAA) in the same resist film have an inhomogeneous distribution (relatively high concentration at the film surface compared to the film bottom). In addition, the total concentration of shell molecules across the film depth is significantly affected (decreases) due to post coating delay and increased exposure dose. Moreover, it is confirmed that the existence of such metal resist film depth inhomogeneities affects the resist's dissolution properties in the developer solution. Specifically, variations in metal resist dissolution characteristics between the film surface, mid-film, and the film bottom are observed. These results confirm the impact of metal resist film properties on its solubility in the developer solution, which can directly affect patterning performance (resolution, line edge/width roughness (LER/LWR), and sensitivity), especially LER/LWR. Keywords: EUV metal resist, Film depth, Inhomogeneity, In situ resist dissolution analysis Experimental conditions 2.1. Materials and processingA metal resist (developed in-house) with a zirconium (Zr) core and a methacrylic acid (MAA) shell was used in these experiments [10,12,24,32,33]. The film thickness was ~30 nm under a postapplication bake (PAB) condition of 80 °C for 60 s. The dissolution process was conducted using normal butyl acetate (nBA) as the developer. This metal resist works as a negative tone type material

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Novel Sn-based photoresist for high aspect ratio patterning

Cited by 7 publications

References 12 publications

Effect of Oxygen on Thermal and Radiation-Induced Chemistries in a Model Organotin Photoresist

Effect of Oxygen on Thermal and Radiation-Induced Chemistries in a Model Organotin Photoresist

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

Characterization Studies on Metal-based EUV Resist Film Properties

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