Novel single mode laser fabrication using focus ion beam (FIB) etching

Kwong, N.; Chen, Nong; Qi, Haihua; Chen, S.; Chen, Jan-Shing; Erlig, H.; Chen, T.R.; Sherer, A.

doi:10.1109/ofc.2006.215573

Cited by 1 publication

(2 citation statements)

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“…Compared to the edge emitting type semiconductor lasers, surface emitting semiconductor lasers, including VCSEL and horizontal cavity surface emitting lasers (HCSEL) [49][50][51] , are more cost effective due to less labor involvement in laser bar testing, bar coating in laser wafer manufacturing. In addition, we have developed focusing ion beam etched surface emitting laser (FIBESEL) [52][53] with unique process flexibility and complete mask free technologies. This additional convenience makes post device process also possible.…”

Section: Edge Emitting Laser Vs Surface Emitting Lasermentioning

confidence: 99%

“…This additional convenience makes post device process also possible. For example, a process-completed and chip-mounted but not sealed FP laser can still be easily processed into a single mode laser with cavity structure post-changed by the FIBE process 52 . Table 1 lists the process comparison for edge emitting and surface emitting lasers, including VCSEL, HCSEL and FIBESEL in manufacturing flow.…”

Section: Edge Emitting Laser Vs Surface Emitting Lasermentioning

confidence: 99%

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Cost-effective telecom/datacom semiconductor lasers

Chen¹,

Chen²,

Hsin³

et al. 2007

Optoelectronic Materials and Devices II

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The recent development of semiconductor laser technologies for cost-effective telecom/datacom applications is reviewed in details in this paper. This includes the laser design, laser chip technology, laser packaging technology and other low cost lasers (chip + packaging). Some design and simulation examples in Archcom laser production are described first. A latest trend in the wafer scale testing/characterization/screening technology for low cost semiconductor laser mass production is discussed then. An advanced long wavelength high power single mode surface emitting laser with wafer scale characterization using our unique mask free focused ion beam (FIB) etching technology is also demonstrated. Detailed descriptions on our wide temperature range (-50 o C to +105 o C) G-PON distributed feedback (DFB) semiconductor lasers with high performance and low cost wafer design are included. Cost reduction innovations in laser package with our beam profile improved laser and optical feedback insensitive (OFBI) laser are also addressed.

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