Novel silicon-on-insulator SP5T switch-LNA front-end IC enabling concurrent dual-band 256-QAM 802.11ac WLAN radio operations

Huang, Chun-Wen Paul; Soricelli, J.; Lam, Lui; Doherty, Mark; Antognetti, Phil; Vaillancourt, William

doi:10.1109/rfic.2013.6569542

Cited by 3 publications

(1 citation statement)

References 4 publications

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“…The world leading RF device vendor Skyworks investigated a novel SP5T module for WLAN application in 2013 [1], RFMD demonstrated a SP6T featuring P-0. and SP10T with adequate intermodulation and harmonic distortion performance in 2010 [3] and this July [4], respectively.…”

Section: Introductionmentioning

confidence: 99%

Monolithic Single-Pole Sixteen-Throw T/R Switch for Next-Generation Front-End Module

Cui

Chen

Liu

2014

IEEE Microw. Wireless Compon. Lett.

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A broadband monolithic linear single-pole, sixteenthrow (SP16T) antenna switch has been designed and fabricated in 180 nm thin film SOI CMOS process, which is intended for the next generation multimode multiband (MMMB) cellular applications. The switch features the minimum 0.7 dB and average 1dB insertion loss, 0.1 dB compression point of 29 dBm and at least 33 dB isolation at all cellular bands for mobile front ends by applying distributed architecture and adaptive supply voltage generator. To the best of our knowledge, this work is the first demonstration of SP16T antenna switch with superior isolation and power handling capacities for most of the known cellular bands with satisfactory harmonic and intermodulation distortion performance on SOI. The simulated and measured results show excellent agreement.Index Terms-Multimode multiband (MMMB), silicon-on-insulator (SOI), switches.

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Section: Introductionmentioning

confidence: 99%

Monolithic Single-Pole Sixteen-Throw T/R Switch for Next-Generation Front-End Module

Cui

Chen

Liu

2014

IEEE Microw. Wireless Compon. Lett.

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A 5.2-GHz full-integrated RF front-end by T/R switch, LNA, and PA co-design with 3.2-dB NF and +25.9-dBm output power

Chen

Tsai

Chuo

et al. 2015

2015 IEEE Asian Solid-State Circuits Conference (A-Sscc)

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Foundry SOI technology for wireless front end modules

Hurwitz¹,

Chaudry²,

Blaschke³

et al. 2013

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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In the last few years, RF SOI has become the technology of choice for RF switches (RFSW) in wireless frontend modules, displacing GaAs pHEMT. More recently RF SOI has also been deployed to switch capacitor banks in antenna tuning applications and is now being discussed as the right technology for integration of tunable power-amplifiers, promising a path to a single-chip front-end module. In this paper we review the latest advancements in RF SOI foundry technology with focus on key figures of merit such as Ron x Coff, switch branch power handling, and linearity. In addition to these process-driven metrics, we will describe attributes of the compact models and design environment that allow fast and accurate simulation of small signal and large signal RFSW performance to create the most advanced and highly integrated products. Index Terms-SOI, RF switch, front end modulesI.

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Novel silicon-on-insulator SP5T switch-LNA front-end IC enabling concurrent dual-band 256-QAM 802.11ac WLAN radio operations

Cited by 3 publications

References 4 publications

Monolithic Single-Pole Sixteen-Throw T/R Switch for Next-Generation Front-End Module

Monolithic Single-Pole Sixteen-Throw T/R Switch for Next-Generation Front-End Module

A 5.2-GHz full-integrated RF front-end by T/R switch, LNA, and PA co-design with 3.2-dB NF and +25.9-dBm output power

Foundry SOI technology for wireless front end modules

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