2017
DOI: 10.1002/smll.201702614
|View full text |Cite
|
Sign up to set email alerts
|

Novel Silicon Doped Tin Oxide–Carbon Microspheres as Anode Material for Lithium Ion Batteries: The Multiple Effects Exerted by Doped Si

Abstract: Silicon doped tin oxide embedded porous carbon microspheres (Si Sn O @C) are synthesized. It is found that the doped Si not only improves the reversibility of lithiation/delithiation reactions, but also prevents Sn from aggregation. In addition, the doped Si introduces extra defects into the carbon matrix and produces Li conductive Li SiO , which accelerates Li diffusion. Together with the conductive, porous carbon matrix that provides void space to accommodate the volume change of Sn during charge/discharge c… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
10
0

Year Published

2018
2018
2024
2024

Publication Types

Select...
8
1

Relationship

0
9

Authors

Journals

citations
Cited by 29 publications
(10 citation statements)
references
References 80 publications
0
10
0
Order By: Relevance
“…Three reduction peaks can be detected in the initial cathodic sweep. The weak cathodic peak located at 1.68 V may be assigned to the [ [93][94][95][96][97] As described in equation 4, the participation of the CF and low crystallinity AC is also indicated especially from the cathodic peak of 0.02V. [74,98] For large parts of the C, both the Sn and the C cathodic peaks will overlap especially for the higher values of x in equation 3.…”
Section: Resultsmentioning
confidence: 99%
“…Three reduction peaks can be detected in the initial cathodic sweep. The weak cathodic peak located at 1.68 V may be assigned to the [ [93][94][95][96][97] As described in equation 4, the participation of the CF and low crystallinity AC is also indicated especially from the cathodic peak of 0.02V. [74,98] For large parts of the C, both the Sn and the C cathodic peaks will overlap especially for the higher values of x in equation 3.…”
Section: Resultsmentioning
confidence: 99%
“…The straight line at low frequency is related to the Warburg impedance (Z re ) corresponding to the Li-ion diffusion; the Warburg impedance coefficient (σ w ) can be estimated from the relations between Z re and ω −1/2 at low frequency using Eq. (9), where ω is the angular frequency [32][33][34].…”
Section: Boosting the Performance By Ti Doping On Sio X Sitesmentioning
confidence: 99%
“…The positive shift indicates stronger SnO bond polarization in the hybrid framework, causing by the formation of SiOSn bonding. 48 The presence of interfacial bonding is also confirmed by Si 2p XPS spectrum of the hybrid framework, which shows an additional SiOSn peak at 102.6 eV with high intensity compared with Si particle sample (Figure S6). 49 The strong interfacial bonding of SiOSn prevents the electrochemical aggregation while accelerating ion shuttling upon repeated lithium insertion/extraction, facilitating long-term cyclic life and fast reaction kinetics.…”
Section: Nano Lettersmentioning
confidence: 67%
“…After Si incorporation, the peak shifts from 495.0 eV (curve a) to higher binding energy (495.3 eV, curve b). The positive shift indicates stronger SnO bond polarization in the hybrid framework, causing by the formation of SiOSn bonding . The presence of interfacial bonding is also confirmed by Si 2p XPS spectrum of the hybrid framework, which shows an additional SiOSn peak at 102.6 eV with high intensity compared with Si particle sample (Figure S6).…”
mentioning
confidence: 66%